RJH60T4DPQ-A0 Datasheet PDF - Renesas

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RJH60T4DPQ-A0
Renesas

Part Number RJH60T4DPQ-A0
Description High Speed Power Switching
Page 8 Pages


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RJH60T4DPQ-A0
Silicon N Channel IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
4
G
123
Absolute Maximum Ratings
www.DataSheet.net/
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-cd
Tj
Tstg
Preliminary Datasheet
R07DS0460EJ0100
Rev.1.00
Jun 15, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector
E
Ratings
600
30
60
30
120
80
235.8
0.53
2.1
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 1 of 7
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RJH60T4DPQ-A0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF
trr
Min
4
Notes: 3. Pulse test
Typ
1.7
2.2
1900
93
33
45
86
85
72
1.2
100
Preliminary
Max
100
±1
8
2.2
1.6
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
IF = 20 A Note3
IF = 10 A
diF/dt = 20 A/s
www.DataSheet.net/
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 2 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60T4DPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
PW = 10 μs
100
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
120
VCE = 10 V
100 Pulse Test
80
Ta = 7C
60
2C
40 25°C
20
0
0 2 4 6 8 10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temperature (Typical)
2.8
VGE = 15 V
Pulse Test
2.4
IC = 60 A
2.0 30 A
1.6 15 A
1.2
0.8
25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)
www.DataSheet.net/
Preliminary
Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
10 V
80
15 V
60
40
20
0
012
9.5 V
9V
8.8 V
8.6 V
8.4 V
8.2 V
8V
7.8 V
VGE = 7.6 V
345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.5
Ta = 25°C
Pulse Test
3.0
2.5
IC = 60 A
2.0
30 A
1.5 15 A
1.0
6 8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
VCE = 10 V
Pulse test
8
IC = 10 mA
6
4
1 mA
2
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60T4DPQ-A0
Diode Forward Characteristics (Typical)
100
VCE = 0 V
Ta = 25°C
80 Pulse Test
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Forward Voltage VF (V)
Preliminary
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
800
VCE
600
400
VGE
16
VCC = 600 V
300 V
12
8
200
0
0
VCC = 600 V
300 V
IC = 30 A
Ta = 25°C
4
0
18 36 54 72 90
Gate Charge Qg (nC)
www.DataSheet.net/
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 4 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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