RJH60M1DPP-M0 Datasheet PDF - Renesas

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RJH60M1DPP-M0
Renesas

Part Number RJH60M1DPP-M0
Description IGBT
Page 10 Pages


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Preliminary Datasheet
RJH60M1DPP-M0
600V - 8A - IGBT
Application: Inverter
R07DS0528EJ0300
Rev.3.00
May 25, 2012
Features
Short circuit withstand time (8 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (75 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
1
23
1. Gate
2. Collector
G 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
16
8
20
8
32
30
4.1
7.2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Page 1 of 9



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RJH60M1DPP-M0
Electrical Characteristics
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V(BR)CES
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
Min
600
5
6
FRD Forward voltage
VF
FRD reverse recovery time
trr
FRD reverse recovery charge
Qrr
FRD peak reverse recovery current Irr
Notes: 3. Pulse test.
Preliminary
Typ
1.9
2.8
275
25
10
20.5
3
11.5
30
12
55
70
0.08
0.09
0.17
8
1.4
75
0.1
3.0
Max
5
±1
7
2.4
1.9
(Ta = 25°C)
Unit Test Conditions
VIC =10 A, VGE = 0
A VCE = 600 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 8 A, VGE = 15 V Note3
V IC =16 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 8 A
ns VCC = 300 V
ns VGE = 15 V
ns IC = 8 A
ns Rg = 5 
mJ(Inductive load)
mJ
mJ
s Tc = 100 C
VGE 360 V, VGE = 15 V
V IF = 8 A Note3
ns IF = 8 A
C diF/dt = 100 A/s
A
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Page 2 of 9



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RJH60M1DPP-M0
Main Characteristics
Collector Dissipation vs.
Case Temperature
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
PW
10
100 μs
= 10 μs
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
20
Tc = 25°C
Pulse Test
16
18 V
12
15 V
12 V
8
10 V
4
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Preliminary
Maximum DC Collector Current vs.
Case Temperature
20
16
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Turn-off SOA
25
20
15
10
5
0
0 200 400 600 800
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
20
Tc = 150°C
Pulse Test
16
15 V
18 V
12
12 V
8
10 V
4
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Page 3 of 9



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RJH60M1DPP-M0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
4
3
IC = 16 A
2 8A
Tc = 25°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
20
Ta = 150°C
16
2C
12
8
4
VCE = 10 V
Pulse Test
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
IC = 10 mA
6
4 1 mA
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
4
IC = 16 A
3
8A
2
Tc = 150°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
5
VGE = 15 V
Pulse Test
4
IC = 16 A
3
8A
2
3A
1
0
25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
Frequency Characteristics (Typical)
5
40
Collector current wave
(Square wave)
3
2
1
Tj = 12C, Tc = 90°C, VCE = 400 V
0 VGE = 15 V, Rg = 5 Ω, duty = 50%
1 10 100 1000
Frequency f (kHz)
Page 4 of 9



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