RJH60F7ADPK Datasheet PDF - Renesas Technology


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RJH60F7ADPK
Renesas Technology

Part Number RJH60F7ADPK
Description Silicon N Channel IGBT
Page 7 Pages

RJH60F7ADPK datasheet pdf
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RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
Preliminary
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REJ03G1837-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6



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RJH60F7ADPK
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
trr
Notes: 3. Pulse test
Min
4
Typ
1.6
4890
198
83
48
36
122
95
1.6
140
Max
100
±1
8
1.75
2.1
Preliminary
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Unit
μA
μA
V
V
V
pF
pF
ns
ns
ns
ns
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 50 A, VGE = 15V Note3
IC = 90 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A, Resistive Load
VCC = 300 V
VGE = 15 V
Rg = 5 Ω Note3
IF = 20 A Note3
IF = 20 A
diF/dt = 100 A/μs
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6



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RJH60F7ADPK
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
= 10 μs
10
1
Tc = 25°C
Single pulse
0.1
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
160
PVuClEse=T1e0stV
TPau=lse25T°eCst
120
80
Tc = 75°C
40
25°C
–25°C
0
0 2 4 6 8 10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
IC = 90 A
1.6 50 A
1.2 20 A
0.8
0.4
VGE = 15 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
Preliminary
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Typical Output Characteristics
Pulse Test
160 Ta = 25°C
10 V
120
15 V
8.4 V
8.6 V
9V
8V
80 7.6 V
40
VGE = 7 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Pulse Test
2.5 Ta = 25°C
2.0
1.5
1.0
IC = 20 A 50 A 90 A
0.5
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
7
6 IC = 10 mA
5
4
1 mA
3
2
1 VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)



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RJH60F7ADPK
Forward Current vs. Forward Voltage (Typical)
100
VGE = 0 V
Pulse Test
80 Ta = 25°C
60
40
20
0
012345
C-E Diode Forward Voltage VCEF (V)
Dynamic Input Characteristics (Typical)
800
IC = 50 A
Ta = 25°C
VCE
600
400
VGE
16
VCE = 600 V
300 V
12
8
200
0
0
VCE = 600 V
300 V
40 80 120 160
Gate Charge Qg (nc)
4
0
200
Switching Characteristics (Typical) (2)
10000
IC = 50 A, RL = 6 Ω
VGE = 15 V, Ta = 25°C
1000
td(off)
100
td(on)
10
1
tr tf
10
100
Gate Resistance Rg (Ω)
Preliminary
Typical Capacitanwcwe wvs.D. ataSheet4U.com
Collector to Emitter Voltage (Typical)
10000
Cies
1000
100 Coes
VGE = 0 V
f = 1 MHz
Cres
10 Ta = 25°C
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
td(off)
100
td(on)
tf
tr
10
1
1 10 100 1000
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
IC = 50 A, RL = 6 Ω
VGE = 15 V
td(off)
100 tr tf
td(on)
10
0 20 40 60 80 100 120 140
Case Temperature Tc (°C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 4 of 6




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