RJH60F5DPK Datasheet PDF - Renesas Technology


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RJH60F5DPK
Renesas Technology

Part Number RJH60F5DPK
Description Silicon N Channel IGBT
Page 7 Pages

RJH60F5DPK datasheet pdf
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RJH60F5DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
Preliminary
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REJ03G1836-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
80
40
160
100
260.4
0.48
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6



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RJH60F5DPK
Preliminary
Electrical Characteristics
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(Tj = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current
ICES ⎯ ⎯ 100 μA VCE = 600V, VGE = 0
Gate to emitter leak current
IGES ⎯ ⎯ ±1 μA VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage
VGE(off)
4
8
Collector to emitter saturation voltage VCE(sat) 1.37 1.8
VCE(sat)
1.7
V VCE = 10V, IC = 1 mA
V IC = 40 A, VGE = 15V Note3
V IC = 80 A, VGE = 15V Note3
Input capacitance
Cies
2880
pF VCE = 25 V
Output capacitance
Reverse transfer capacitance
Coes 122 pF VGE = 0 V
Cres 47 pF f = 1 MHz
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
td(on) 40 ns IC = 30 A, Resistive Load
tr 35 ns VCC = 300 V
td(off)
tf
80
80
ns VGE = 15 V
ns Rg = 5 Ω Note3
VECF1 1.6 2.1 V IF = 20 A Note3
VECF2
1.8
V IF = 40 A Note3
trr 140 ns IF = 20 A
diF/dt = 100 A/μs
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6



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RJH60F5DPK
Main Characteristics
Maximum Safe Operation Area
1000
100 PW
= 10 μs
10
1
Tc = 25°C
Single pulse
0.1
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
160
PVuClEse=T1e0stV
TPau=lse25T°eCst
120
80
Tc = 75°C
40
25°C
–25°C
0
0 2 4 6 8 10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.4
2.0 IC = 80 A
40 A
1.6
20 A
1.2
0.8
0.4 VGE = 15 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
Preliminary
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Typical Output Characteristics
160
Pulse Test
Ta = 25°C
120 13 V
15 V
9V
10 V
8.6 V
80
8V
40
VGE = 7.4 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
4
Pulse Test
Ta = 25°C
3
2
1
IC = 20 A 40 A 80 A
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
7
6 IC = 10 mA
5
4
1 mA
3
2
1 VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)



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RJH60F5DPK
Forward Current vs. Forward Voltage (Typical)
100
VGE = 0 V
Pulse Test
80 Ta = 25°C
60
40
20
0
012345
C-E Diode Forward Voltage VCEF (V)
Dynamic Input Characteristics (Typical)
800
IC = 40 A
Ta = 25°C
VCE
600
VGE 16
12
VCE = 600 V
400 300 V 8
200
0
0
VCE = 600 V
300 V
20 40 60 80
Gate Charge Qg (nc)
4
0
100
Switching Characteristics (Typical) (2)
10000
IC = 40 A, RL = 7.5 Ω
VGE = 15 V, Ta = 25°C
1000
100
td(off)
tf
tr td(on)
10
1 10 100
Gate Resistance Rg (Ω)
Preliminary
Typical Capacitanwcwe wvs.D. ataSheet4U.com
Collector to Emitter Voltage (Typical)
10000
VGE = 0 V
f = 1 MHz
Cies
1000
100
Coes
Ta = 25°C
10
Cres
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
100 tf
td(off)
td(on)
10
tr
1
1 10 100 1000
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
IC = 40 A, RL = 7.5 Ω
VGE = 15 V
100
tr
td(on)
tf
td(off)
10
0 20 40 60 80 100 120 140
Case Temperature Tc (°C)
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 4 of 6




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