RJH60F4DPQ-A0 Datasheet PDF - Renesas


www.Datasheet-PDF.com

RJH60F4DPQ-A0
Renesas

Part Number RJH60F4DPQ-A0
Description High Speed Power Switching
Page 8 Pages

RJH60F4DPQ-A0 datasheet pdf
View PDF for PC
RJH60F4DPQ-A0 pdf
View PDF for Mobile


No Preview Available !

Preliminary Datasheet
RJH60F4DPQ-A0
600 V - 30 A - IGBT
High Speed Power Switching
R07DS0325EJ0200
Rev.2.00
Jul 22, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
123
Absolute Maximum Ratings
www.DataSheet.net/
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-cd
Tj
Tstg
1. Gate
2. Collector
3. Emitter
4. Collector
E
Ratings
600
30
60
30
120
100
235.8
0.53
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0325EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH60F4DPQ-A0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
VECF2
trr
Min
4
Notes: 3. Pulse test
Typ
1.4
1.7
1900
93
33
45
150
85
80
1.2
1.5
90
Preliminary
Max
100
±1
8
1.82
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0325EJ0200 Rev.2.00
Jul 22, 2011
Page 2 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH60F4DPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
120
VCE = 10 V
100 Pulse Test
80
60
40 Tc = 75°C
20
25°C
–25°C
0
4 6 8 10 12 14
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
VGE = 15 V
Pulse Test
1.8
IC = 60 A
1.6
30 A
1.4
15 A
1.2
1.0
25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
www.DataSheet.net/
Preliminary
Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
11 V
10 V
12 V
80
15 V
9.5 V
60
9V
40
8.5 V
20
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.4
IC = 60 A
1.8
1.2
0.6
6
30 A
15 A
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
VCE = 10 V
8
6
IC = 10 mA 1 mA
4
2
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)
R07DS0325EJ0200 Rev.2.00
Jul 22, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH60F4DPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20 VGE = 0 V
Ta = 25°C
Pulse Test
0
01234
C-E Diode Forward Voltage VCEF (V)
Preliminary
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
800 16
VGE
VCE
600
VCE = 600 V
300 V
12
400 8
200
0
0
4
VCE = 600 V
300 V
IC = 30 A 0
20 40 60 80 100
Gate Charge Qg (nC)
www.DataSheet.net/
R07DS0325EJ0200 Rev.2.00
Jul 22, 2011
Page 4 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/




RJH60F4DPQ-A0 datasheet pdf
Download PDF
RJH60F4DPQ-A0 pdf
View PDF for Mobile


Similiar Datasheets : RJH60F4DPQ-A0

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact