RJH60F4DPK Datasheet PDF - Renesas Technology


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RJH60F4DPK
Renesas Technology

Part Number RJH60F4DPK
Description Silicon N Channel IGBT
Page 7 Pages

RJH60F4DPK datasheet pdf
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RJH60F4DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
Preliminary
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REJ03G1835-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
Tj
Tstg
Ratings
600
±30
60
30
120
100
235.8
0.53
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6



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RJH60F4DPK
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
VECF2
trr
Notes: 3. Pulse test
Min
4
Typ
1.4
1.7
1945
93
33
30
32
65
80
1.6
1.8
140
Max
100
±1
8
1.82
2.1
Preliminary
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
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(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A, Resistive Load
VCC = 300V
VGE = 15V
Rg = 5 Ω Note3
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/μs
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6



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RJH60F4DPK
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
120
VCE = 10 V
100 Pulse Test
80
60
Tc = 75°C
40
25°C
20
–25°C
0
0 2 4 6 8 10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.4
VGE = 15 V
2.0 Pulse Test
IC = 60 A
1.6 30 A
15 A
1.2
0.8
0.4
0
25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
Preliminary
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Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
11 V
10 V
12 V
80
15 V
9.5 V
60
9V
40
8.5 V
20
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.4
30 A 60 A
1.8
1.2
0.6 IC = 15 A
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
8
VCE = 10 V
7
6
5
IC = 10 mA 1 mA
4
3
2
1
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)



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RJH60F4DPK
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current Characteristics (Typical)
100
VGE = 0 V
Pulse Test
80
60
40
20
0
012345
Collector to Emitter Diode
Forward Voltage VECF (V)
Dynamic Input Characteristics (Typical)
800 16
VGE
600 VCE
VCE = 600 V
300 V
12
400 8
200
0
0
4
VCE = 600 V
300 V
IC = 30 A 0
20 40 60 80 100
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
1000
IC = 30 A, RL = 10 Ω
VGE = 15 A, Ta = 25°C
100 tf
td(off)
tr
td(on)
10
1 10 100
Gate Resistance Rg (Ω)
Preliminary
10000
1000
Typical Capacitanwcewwvs.D. ataSheet4U.com
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
100 tf
td(off)
td(on)
10
tr
1
1 10 100 1000
Colloctor Current IC (A)
Switching Characteristics (Typical) (3)
1000
IC = 30 A, VGE = 15 A
RL = 10 Ω, Rg = 5 Ω
100 tf
td(off)
tr
td(on)
10
0 20 40 60 80 100 120 140
Case Temperature Tc (°C)
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 4 of 6




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