RJH60F3DPQ-A0 Datasheet PDF - Renesas

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RJH60F3DPQ-A0
Renesas

Part Number RJH60F3DPQ-A0
Description High Speed Power Switching
Page 8 Pages


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Preliminary Datasheet
RJH60F3DPQ-A0
600 V - 20 A - IGBT
High Speed Power Switching
R07DS0391EJ0200
Rev.2.00
Jul 22, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
1. Gate
2. Collector
G 3. Emitter
4. Collector
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E
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
40
20
80
80
178.5
0.7
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
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RJH60F3DPQ-A0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
VECF2
trr
Min
4
Notes: 3. Pulse test
Typ
1.4
1.6
1260
73
21
44
96
65
92
1.2
1.5
90
Preliminary
Max
100
±1
8
1.82
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 20 A, VGE = 15 V Note3
IC = 40 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
IC = 30 A
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive Load
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/s
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R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 2 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60F3DPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
100 100 μs PW = 10 μs
10
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
80
PVuClEse=T1e0stV
TPau=lse25T°eCst
60
40 Tc = 75°C
25°C
20 –25°C
0
2 4 6 8 10 12
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
VGE = 15 V
Pulse Test
2.0
IC = 40 A
1.8
1.6 20 A
15 A
1.4
1.2
25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
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Preliminary
Typical Output Characteristics
80
Ta = 25°C
Pulse Test
60 12 V
15 V
40
10.5 V
11 V
10 V
9.5 V
9V
20
VGE = 8.5 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.4
Ta = 25°C
3.0 Pulse Test
2.6
2.2 IC = 40 A
20 A
1.8 15 A
1.4
1.0
8
10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8 IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60F3DPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20 VGE = 0 V
Ta = 25°C
Pulse Test
0
01234
C-E Diode Forward Voltage VCEF (V)
Preliminary
10000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
10 Cres
VGE = 0 V
f = 1 MHz Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
800
VCE
600
16
VGE IC = 20 A
Ta = 25°C
VCC = 600 V 12
300 V
400 8
200
0
0
VCC = 600 V
300 V
12 24 32 48
Gate Charge Qg (nc)
4
0
60
www.DataSheet.net/
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 4 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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