RJH60F0DPQ-A0 Datasheet PDF - Renesas

www.Datasheet-PDF.com

RJH60F0DPQ-A0
Renesas

Part Number RJH60F0DPQ-A0
Description High Speed Power Switching
Page 8 Pages


RJH60F0DPQ-A0 datasheet pdf
View PDF for PC
RJH60F0DPQ-A0 pdf
View PDF for Mobile


No Preview Available !

Preliminary Datasheet
RJH60F0DPQ-A0
600 V - 25 A - IGBT
High Speed Power Switching
R07DS0324EJ0200
Rev.2.00
Jul 22, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC
j-c
Tj
Tstg
Ratings
600
±30
50
25
100
100
201.6
0.62
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0324EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH60F0DPQ-A0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode forward voltage
C-E diode reverse recovery time
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
VECF2
trr
Notes: 3. Pulse test
Min
4
Typ
1.4
1.7
1550
82
26
46
92
70
90
1.2
1.5
90
Preliminary
Max
100
±1
8
1.82
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 25 A, VGE = 15V Note3
IC = 50 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0324EJ0200 Rev.2.00
Jul 22, 2011
Page 2 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH60F0DPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
100 10 μs
10
1
0.1
Ta = 25°C
1 shot
0.01
0.1 1
10 100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
100
PVuClEse=T1e0stV
TPau=lse25T°eCst
80
60
40 Tc = 75°C
25°C
20
–25°C
0
0 2 4 6 8 10 12
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
2.0 IC = 50 A
1.8
1.6 25 A
1.4 15 A
1.2 VGE = 15 V
Pulse Test
1.0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
www.DataSheet.net/
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80 13 V
15 V
60
10.5 V
11 V 10 V
9.5 V
40
9V
20
VGE = 8.5 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 25°C
Pulse Test
4
IC = 15 A
25 A
3 50 A
2
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8 IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0324EJ0200 Rev.2.00
Jul 22, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH60F0DPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20 VGE = 0 V
Ta = 25°C
Pulse Test
0
01234
C-E Diode Forward Voltage VCEF (V)
Preliminary
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
VGE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
800
VCE
600
16
VGE IC = 25 A
Ta = 25°C
VCE = 600 V
300 V
12
400 8
200
0
0
VCE = 600 V
300 V
20 40 60
Gate Charge Qg (nc)
4
0
80
www.DataSheet.net/
R07DS0324EJ0200 Rev.2.00
Jul 22, 2011
Page 4 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



RJH60F0DPQ-A0 datasheet pdf
Download PDF
RJH60F0DPQ-A0 pdf
View PDF for Mobile


Related : Start with RJH60F0DPQ-A Part Numbers by
RJH60F0DPQ-A0 High Speed Power Switching RJH60F0DPQ-A0
Renesas
RJH60F0DPQ-A0 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact