RJH60D6DPM Datasheet PDF - Renesas

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RJH60D6DPM
Renesas

Part Number RJH60D6DPM
Description IGBT
Page 10 Pages


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Preliminary Datasheet
RJH60D6DPM
600V - 40A - IGBT
Application: Inverter
R07DS0175EJ0300
Rev.3.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1
2
3
1. Gate
G 2. Collector
3. Emitter
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
80
40
160
30
120
50
2.5
3.95
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0175EJ0300 Rev.3.00
Apr 19, 2012
Page 1 of 9
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RJH60D6DPM
Preliminary
Electrical Characteristics
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
VBR(CES)
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
VF
trr
Qrr
Irr
Min Typ
600 —
——
——
4.0 —
— 1.6
— 1.8
— 2500
— 150
— 70
— 104
— 15
— 45
— 50
— 38
— 160
— 50
— 0.85
— 0.60
— 1.45
3.0 5.0
— 1.4
100
www.DataSheet.net/
0.18
— 4.2
Max
5
±1
6.0
2.2
1.9
(Ta = 25°C)
Unit Test Conditions
VIC =10 A, VGE = 0
A VCE = 600 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 40 A, VGE = 15 V Note3
V IC = 80 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 40 A
ns VCC = 300 V
ns VGE = 15 V
ns IC = 40 A
ns Rg = 5 
mJ(Inductive load)
mJ
mJ
s VCC 360 V, VGE = 15 V
V IF = 30 A Note3
ns IF = 30 A
C diF/dt = 100 A/s
A
R07DS0175EJ0300 Rev.3.00
Apr 19, 2012
Page 2 of 9
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RJH60D6DPM
Main Characteristics
Collector Dissipation vs.
Case Temperature
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Preliminary
Maximum DC Collector Current vs.
Case Temperature
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100
100 μs
PW
= 10 μs
10
1
Tc = 25°C
Single pulse
0.1
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
160
Tc = 25°C
Pulse Test
11 V
10 V
120 13 V
15 V
80
9V
40 VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Turn-off SOA
200
160
120
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80
40
0
0 200 400 600 800
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
160
Tc = 150°C
Pulse Test
120 13 V
11 V
10 V
15 V
80
9V
VGE = 8 V
40
0
012345
Collector to Emitter Voltage VCE (V)
R07DS0175EJ0300 Rev.3.00
Apr 19, 2012
Page 3 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60D6DPM
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
IC = 40 A
80 A
3
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
IC = 40 A
80 A
3
22
1
4 8 12 16 20
Gate to Emitter Voltage VGE (V)
1
4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
160
Tc = 25°C
120 150°C
80
40
VCE = 10 V
Pulse Test
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.4
VGE = 15 V
2.2 Pulse Test
IC = 80 A
2.0
www.DataSheet.net/
1.8
1.6
1.4
40 A
20 A
1.2
25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6 IC = 10 mA
4
1 mA
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
12
10
0
Collector current wave
8 (Square wave)
6
Tj = 125°C
4 Tc = 90°C
VCE = 400 V
2 VGE = 15 V
Rg = 5 Ω
duty = 50%
0
1 10
100
Frequency f (kHz)
1000
R07DS0175EJ0300 Rev.3.00
Apr 19, 2012
Page 4 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/



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