RJH60D5DPQ-A0 Datasheet PDF - Renesas

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RJH60D5DPQ-A0
Renesas

Part Number RJH60D5DPQ-A0
Description IGBT
Page 8 Pages


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Preliminary Datasheet
RJH60D5DPQ-A0
600 V - 37 A - IGBT
Application: Inverter
R07DS0527EJ0100
Rev.1.00
Aug 26, 2011
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
75
37
150
30
120
200
0.63
2.1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0527EJ0100 Rev.1.00
Aug 26, 2011
Page 1 of 7
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RJH60D5DPQ-A0
Electrical Characteristics
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Short circuit withstand time
Symbol
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
tsc
FRD Forward voltage
FRD reverse recovery time
VF
trr
Notes: 3. Pulse test.
Min
4.0
3.0
Preliminary
Typ
1.6
2.0
1900
120
60
78
12
36
50
35
130
50
5.0
1.4
100
Max
5
±1
6.0
2.2
1.9
Unit
A
(Ta = 25°C)
Test Conditions
VCE = 600 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 37 A, VGE = 15 V Note3
V IC =75 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 37 A
ns VCC = 300 V, VGE = 15 V
ns IC = 37 A
ns Rg = 5 
ns Inductive load
s VCC 360 V, VGE = 15 V
V IF = 30 A Note3
ns IF = 30 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0527EJ0100 Rev.1.00
Aug 26, 2011
Page 2 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60D5DPQ-A0
Main Characteristics
Collector Dissipation vs.
Case Temperature
250
200
150
100
50
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Preliminary
Maximum DC Collector Current vs.
Case Temperature
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100 PW
10 100 μs = 10 μs
1
Tc = 25°C
Single pulse
0.1
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
150
Ta = 25°C
Pulse Test
125
15 V
100
18 V
75
12 V
10 V
50
VGE = 8 V
25
0
012345
Collector to Emitter Voltage VCE (V)
Turn-off SOA
200
160
120
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80
40
0
0 200 400 600 800
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
150
Ta = 150°C
Pulse Test
125
15 V
100
18 V
75
12 V
10 V
50
VGE = 8 V
25
0
012345
Collector to Emitter Voltage VCE (V)
R07DS0527EJ0100 Rev.1.00
Aug 26, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60D5DPQ-A0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 25°C
Pulse Test
6
IC = 37 A
75 A
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 150°C
Pulse Test
6
IC = 37 A
75 A
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Transfer Characteristics (Typical)
150
125
Ta = 25°C
150°C
100
75
50
25 VCE = 10 V
Pulse Test
0
0 4 8 12 16
Gate to Emitter Voltage VGE (V)
Diode Forward Characteristics (Typical)
120
100
Ta = 25°C
150°C
80
60
40
www.DataSheet.net/
20
VCE = 0 V
Pulse Test
0
01234
Forward Voltege VF (V)
R07DS0527EJ0100 Rev.1.00
Aug 26, 2011
Page 4 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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