RJH6087BDPK Datasheet PDF - Renesas


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RJH6087BDPK
Renesas

Part Number RJH6087BDPK
Description High Speed Power Switching
Page 8 Pages

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Preliminary Datasheet
RJH6087BDPK
Silicon N Channel IGBT
High Speed Power Switching
R07DS0389EJ0100
Rev.1.00
May 11, 2011
Features
Ultra high speed switching
tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load)
Low on-state voltage
Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
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Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES
VGES
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width limited by maximum junction temperature.
Ratings
600
±30
50
100
100
223.2
0.56
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C / W
°C
°C
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 1 of 7
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RJH6087BDPK
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Switching time
C-E diode Forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
trr
Min
3.0
Notes: 3. Pulse test
Typ
2.65
3.2
1800
200
16
45
35
95
55
1.4
100
Preliminary
Max
10
±1
5.5
3.5
1.9
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
VCE = 600 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 25 A, VGE = 15 V Note3
IC = 50 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
IC = 30 A
VCC = 300 V, VGE = 15 V
Rg = 5 Ω
Inductive Load
IF = 30 A Note3
IF = 30 A
diF/dt = 100 A/μs
www.DataSheet.net/
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 2 of 7
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RJH6087BDPK
Main Characteristics
1000
100
Maximum Safe Operation Area
PW = 10 μs
10
1
0.1
0.01
Ta = 25°C
1 shot pulse
0.001
0.1 1
10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
100
VCE = 10 V
Pulse Test
80
60
Ta = 75°C
40
25°C
20
–25°C
0
2 4 6 8 10 12
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
7
VGE = 15 V
6 Pulse Test
5
IC = 100 A
4 50 A
3 25 A
20 A
2 10 A
1
25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
www.DataSheet.net/
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
8.4 V
9V
10 V
60 13 V
15 V
40
8V
7.6 V
7.2 V
6.8 V
20 VGE = 6.4 V
0
0123456
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
8
Ta = 25°C
Pulse Test
6
4
IC = 50 A
2
25 A 20 A 10 A
0
4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
6 IC = 10 mA
4
2
VCE = 10 V
Pulse Test
0
25 0 25
1 mA
50 75
100 125
150
Junction Temparature Tj (°C)
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH6087BDPK
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20 VGE = 0 V
Ta = 25°C
Pulse Test
0
01234
C-E Diode Forward Voltage VCEF (V)
Preliminary
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100 Coes
10
VGE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0 50 100 150 200 250
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
800
IC = 50 A
Ta = 25°C
VGE
16
600
VCE
400
VCC = 480 V
300 V
100 V
12
8
200
0
0
VCC = 480 V
300 V
100 V
20 40 60 80
Gate Charge Qg (nc)
4
0
100
www.DataSheet.net/
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 4 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/




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