RJH30H2DPK-M0 Datasheet PDF - Renesas

www.Datasheet-PDF.com

RJH30H2DPK-M0
Renesas

Part Number RJH30H2DPK-M0
Description High Speed Power Switching
Page 7 Pages


RJH30H2DPK-M0 datasheet pdf
View PDF for PC
RJH30H2DPK-M0 pdf
View PDF for Mobile


No Preview Available !

RJH30H2DPK-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
High speed switching: tr = 100 ns typ, tf = 180 ns typ
Low leak current: ICES = 1 A max
Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
12 3
G
Preliminary Datasheet
R07DS0464EJ0200
Rev.2.00
Jun 15, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector to emitter diode Forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
www.DataSheet.net/
Symbol
VCES
VGES
Ic
ic(peak) Note1
iDF(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
35
250
100
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH30H2DPK-M0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
FRD forward voltage
FRD reverse recovery time
VF
trr
Notes: 3. Pulse test.
Min
2.5
Preliminary
Typ
1.4
1200
80
30
37
6
10
0.02
0.1
0.06
0.18
1.4
23
Max
1
±100
5
1.9
1.7
Unit
A
nA
V
V
pF
pF
pF
nC
nC
nC
s
s
s
s
(Ta = 25°C)
Test Conditions
VCE = 360 V, VGE = 0
VGE = ± 30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 35 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 150 V
IC = 35 A
IC = 35 A
RL = 4.5
VGE = 15 V
RG = 5
V IF = 20 A Note3
ns IF = 20 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 2 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH30H2DPK-M0
Main Characteristics
Maximum Safe Operation Area
1000
100 10 μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1 1
10
100 1000
Collector to Emitter Voltage VCE (V)
Preliminary
Typical Output Characteristics (1)
100
Ta = 25°C
Pulse Test
80 8 V
10 V
15 V
60
7V
6.5 V
6V
40
5.5 V
20 VGE = 5 V
0
012345
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
Typical Transfer Characteristics
200
10 V
12 V
160
15 V
9V
8V
50
VCE = 10 V
Pulse Test
40
120
80
Ta = 25°C
Pulse Test
7V
6V
www.DataSheet.net/
30
20
Tc = 75°C
25°C
–25°C
40
VGE = 5 V
0
0 2 4 6 8 10
10
0
0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
4
IC = 35 A
80 A
3 120 A
2
1
Pulse Test
Ta = 25°C
0
04
8
12 16 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
VGE = 15 V
Pulse Test
Tc = –25°C
1
25°C 75°C
0.1
1
10 100
Collector Current IC (A)
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 3 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



No Preview Available !

RJH30H2DPK-M0
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
VGE = 0 V, f = 1 MHz
Ta = 25°C
1000
Cies
100
Coes
Cres
10
0 20 40 60 80 100
Colloctor to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 150 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
tf
100
td(off)
tr
td(on)
10
1 10
100
Colloctor Current IC (A)
Switching Characteristics (Typical) (3)
1000
IC = 35 A, VGE = 15 V
RL = 4.5 Ω, Rg = 5 Ω
tf
tr
100
td(off)
td(on)
10
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Dynamic Input Characteristics (Typical)
400
VCC = 150 V
IC = 35 A
Ta = 25°C
300
16
VGE
12
200 8
100
0
0
4
VCE
8 16 24 32
Gate Charge Qg (nC)
0
40
Switching Characteristics (Typical) (2)
1000
IC = 35 A, VGE = 15 V
RL = 4.5 Ω, Ta = 25°C
tf
100 tr
td(off)
www.DataSheet.net/
td(on)
10
1 10 100
Gate Resistance Rg (Ω)
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 4 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



RJH30H2DPK-M0 datasheet pdf
Download PDF
RJH30H2DPK-M0 pdf
View PDF for Mobile


Related : Start with RJH30H2DPK-M Part Numbers by
RJH30H2DPK-M0 High Speed Power Switching RJH30H2DPK-M0
Renesas
RJH30H2DPK-M0 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact