RJH30H1DPP-M0 Datasheet PDF - Renesas

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RJH30H1DPP-M0
Renesas

Part Number RJH30H1DPP-M0
Description High Speed Power Switching
Page 7 Pages


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RJH30H1DPP-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr =80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
Low leak current: ICES = 1 A max.
Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
Isolated package: TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0463EJ0200
Rev.2.00
Jun 15, 2011
C
1
23
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode Forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
1. Gate
2. Collector
G 3. Emitter
www.DataSheet.net/
E
Symbol
VCES
VGES
IC
ic(peak) Note1
iDF(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
30
200
100
20
6.25
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH30H1DPP-M0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
FRD Forward voltage
FRD Reverse recovery time
Notes: 3. Pulse test
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
VF
trr
Min
2.5
Preliminary
Typ
1.5
740
60
17
23
4
8
0.02
0.08
0.04
0.15
1.4
23
Max
1
±100
5
2
1.7
Unit
A
nA
V
V
(Tj = 25°C)
Test Conditions
VCE = 360 V, VGE = 0
VGE = ± 30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 30A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 150 V
nC IC = 30 A
s IC = 30 A
s RL = 5
s VGE = 15 V
s RG = 5
V IF = 20 A Note3
ns IF = 20 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Page 2 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH30H1DPP-M0
Main Characteristics
Maximum Safe Operation Area
1000
100
10
PW
= 100 μs
10 μs
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1 1
10
100 1000
Collector to Emitter Voltage VCE (V)
Preliminary
Typical Output Characteristics (1)
100
Ta = 25°C
Pulse Test 8 V
80
9V
10 V
60
15 V
40
7.5 V
7V
6.5 V
6V
5.5 V
20 VGE = 5 V
0
012345
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
200
Ta = 25°C
Pulse Test
160
14 V
15 V
120
12 V
11 V
10 V
9V
8V
7V
80
6V
40
VGE = 5 V
0
0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
IC = 30 A
4 60 A
90 A
3
2
1
Pulse Test
Ta = 25°C
0
04
8
12 16 20
Gate to Emitter Voltage VGE (V)
www.DataSheet.net/
Typical Transfer Characteristics
50
VCE = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
10 –25°C
0
0 2 4 6 8 10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
VGE = 15 V
Pulse Test
Tc = –25°C
1
25°C 75°C
0.1
1
10 100
Collector Current IC (A)
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Page 3 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH30H1DPP-M0
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
VGE = 0 V, f = 1 MHz
Ta = 25°C
1000
Cies
100
Coes
10
Cres
1
0 20 40 60 80 100
Colloctor to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 150 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
100
10
1
tf
td(off)
tr
td(on)
10 100
Colloctor Current IC (A)
Switching Characteristics (Typical) (3)
1000
IC = 30 A, VGE = 15 V
RL = 5 Ω, Rg = 5 Ω
tf
100 tr
td(off)
td(on)
10
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Dynamic Input Characteristics (Typical)
800
VCC = 150 V
IC = 30 A
Ta = 25°C
600
VGE
16
12
400 8
200
0
0
4
VCE
8 16 24 32
Gate Charge Qg (nC)
0
40
Switching Characteristics (Typical) (2)
1000
IC = 30 A, VGE = 15 V
RL = 5 Ω, Ta = 25°C
tf
100 tr
td(off)
www.DataSheet.net/
td(on)
10
1 10 100
Gate Resistance Rg (Ω)
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Page 4 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



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