RJH1DF7RDPQ-80 Datasheet PDF - Renesas

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RJH1DF7RDPQ-80
Renesas

Part Number RJH1DF7RDPQ-80
Description High Speed Power Switching
Page 7 Pages


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RJH1DF7RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Features
Voltage resonance circuit use
Reverse conducting IGBT with monolithic body diode
High efficiency device for induction heating
Low collector to emitter saturation voltage
VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj = 25°C)
Gate to emitter voltage rating ±30 V
Pb-free lead plating
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
4
123
G
www.DataSheet.net/
Preliminary Datasheet
R07DS0413EJ0100
Rev.1.00
May 18, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF
PC
θj-c
Tj
Tstg
Ratings
1350
±30
60
35
100
25
250
0.5
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0413EJ0100 Rev.1.00
May 18, 2011
Page 1of 6
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RJH1DF7RDPQ-80
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
Notes: 2. Pulse test
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VF
Min
3.5
Typ
1.95
3330
62
50
58
78
144
208
3.4
Preliminary
Max
100
±1
7.0
2.55
4.4
Unit
μA
μA
V
V
pF
pF
pF
ns
ns
ns
ns
V
(Tj = 25°C)
Test Conditions
VCE = 1350 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 35 A, VGE = 15 V Note2
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 35 A
VCE = 600 V, VGE = 15 V
Rg = 5 Ω Note2
Resistive Load
IF = 10 A Note2
www.DataSheet.net/
R07DS0413EJ0100 Rev.1.00
May 18, 2011
Page 2 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH1DF7RDPQ-80
Main Characteristics
Maximum Safe Operation Area
1000
PW = 10 μs
100
10
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100
1000 10000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
80
VCE = 10 V
Pulse Test
60
40
Tc = 75°C
25°C
20
–25°C
0
2 4 6 8 10 12
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
5
4
IC = 100 A
3 60 A
35 A
2
1
VGE = 15 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
www.DataSheet.net/
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80 9.6 V
10 V
60 15 V
20 V
40
20
9.4 V
9.2 V
9V
8.8 V
8.6 V
8.4 V
VGE = 8.2 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 25°C
Pulse Test
4
IC = 100 A
3
60 A
35 A
2
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0413EJ0100 Rev.1.00
May 18, 2011
Page 3 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH1DF7RDPQ-80
Forward Current vs. Forward Voltage (Typical)
40
VGE = 0 V
Ta = 25°C
Pulse Test
30
20
10
0
02468
C-E Diode Forward Voltage VCEF (V)
Preliminary
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
VGE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
800
VGE
16
VCE
600
VCC = 600 V
300 V
12
400
200
0
0
8
VCC = 600 V
300 V
4
IC = 35 A
Ta = 25°C
0
40 80 120 160 200
Gate Charge Qg (nC)
Switching Characteristics (Typical) (1)
1000
tf
td(off)
100
td(on)
tr
10
www.DataSheet.net/
VCC = 600 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C, Resistive load
1
1 10 100
Collector Current IC (A)
Switching Characteristics (Typical) (2)
10000
VCC = 600 V, VGE = 15 V
IC = 35 A, Ta = 25°C, Registive Load
1000
100
td(off)
tf
tr
td(on)
10
1 10 100
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (3)
1000
tf
td(off)
100 tr
td(on)
VCC = 600 V, VGE = 15 V
IC = 35 A, Rg = 5 Ω, Registive Load
10
25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0413EJ0100 Rev.1.00
May 18, 2011
Page 4 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/



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