RJH1CV6DPK Datasheet PDF - Renesas

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RJH1CV6DPK
Renesas

Part Number RJH1CV6DPK
Description IGBT
Page 10 Pages


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Preliminary Datasheet
RJH1CV6DPK
1200V - 30A - IGBT
Application: Inverter
R07DS0747EJ0200
Rev.2.00
Jun 12, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 180 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
1200
30
60
30
90
30
90
290
0.43
0.69
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0747EJ0200 Rev.2.00
Jun 12, 2012
Page 1 of 9
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RJH1CV6DPK
Preliminary
Electrical Characteristics
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V(BR)CES
ICES/IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
Min
1200
4.5
Typ
1.8
2.6
1600
85
43
105
14
55
46
33
125
120
2.3
1.7
4.0
5
FRD forward voltage
FRD reverse recovery time
VF
trr
2.0
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180
FRD reverse recovery charge
Qrr — 0.63
FRD peak reverse recovery current Irr — 9.2
Notes: 3. Pulse test.
Max
5
±1
6.5
2.6
(Ta = 25°C)
Unit Test Conditions
VIC =10 A, VGE = 0
A VCE = 1200 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 30 A, VGE = 15 V Note3
V IC = 60 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 35 A
ns VCC = 600 V
ns VGE = 15 V
ns IC = 30 A
ns Rg = 5 
mJInductive load
mJ
mJ
s VCC 720 V, VGE = 15 V
Tc 125°C
V IF = 30 A Note3
ns IF = 30 A
C diF/dt = 100 A/s
A
R07DS0747EJ0200 Rev.2.00
Jun 12, 2012
Page 2 of 9
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RJH1CV6DPK
Main Characteristics
Collector Dissipation vs.
Case Temperature
400
300
200
100
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Preliminary
Maximum DC Collector Current vs.
Case Temperature
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100 PW
10
100 μs
= 10 μs
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100
1000 10000
Collector to Emitter Voltage VCE (V)
Turn-off SOA
100
80
60
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40
20
0
0 400 800 1200 1600
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Tc = 25°C
80 Pulse Test
15 V
12 V
60
10 V
40
20 VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Tc = 150°C
80 Pulse Test
60
15 V
12 V
40 10 V
20 VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
R07DS0747EJ0200 Rev.2.00
Jun 12, 2012
Page 3 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH1CV6DPK
Collector to Emitter Saturation Voltage vs.
Gate to Emitter Voltage (Typical)
5
4
3
IC = 60 A
2 30 A
Tc = 25°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
80
Tc= 25°C
150°C
60
40
20
VCE = 10 V
Pulse Test
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6 IC = 10 mA
4
1 mA
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Saturation Voltage vs.
Gate to Emitter Voltage (Typical)
5
4
IC = 60 A
3
30 A
2
Tc = 150°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
4.0
3.5 IC = 60 A
3.0
2.5 30 A
2.0
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1.5
VGE = 15 V
Pulse Test
1.0
25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
25
20 0
Collector current wave
(Square wave)
15
10
Tj = 12C
Tc = 90°C
VCE = 400 V
5
VGE = 15 V
Rg = 5 Ω
duty = 50%
0
1 10 100 1000
Frequency f (kHz)
R07DS0747EJ0200 Rev.2.00
Jun 12, 2012
Page 4 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/



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