RFN20TJ6S Datasheet PDF - Rohm

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RFN20TJ6S
Rohm

Part Number RFN20TJ6S
Description Super Fast Recovery Diode
Page 6 Pages


RFN20TJ6S datasheet pdf
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Super Fast Recovery Diode
RFN20TJ6S
Data Sheet
lSeries
Standard Fast Recovery
lApplication
General rectification
lFeatures
1) Low forward voltage
2) Low switching loss
3) High current overload capacity
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
f3.1±0.1
10.2±0.2
4.5±0.1
2.6±0.1
lStructure
RFN20
TJ6S 1
2
1.4±0.2
Cathode Anode
2.6±0.1
2.54±0.1
0.83±0.1
5.08±0.1
0.6±0.1
ROHM : TO220ACFP
1 : Manufacture year, week,day, package code
2 : Serial number
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
600 V
Reverse voltage
VR Direct reverse voltage
600 V
Average current
Io 60Hz half sin wave , resistive load Tc=50°C
20
A
Non-repetitive forward surge current IFSM 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C
150
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=20A
Tj=25°C 1.0
Tj=125°C -
Reverse current
IR
VR=600V
Tj=25°C
Tj=125°C
-
-
Reverse recovery time
Forward recovery time
Forward recovery voltage
trr IF=0.5A, IR=1A, Irr=0.25×IR -
IF=20A, VR=400V, dIF/dt=-100A/ms -
tfr IF=20A, dIF/dt=100A/ms, -
VFp
VFR=1.1xVFmax
-
Thermal resistance
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case
-
-
Typ.
1.25
1.1
0.1
7
40
85
300
3.2
-
-
Max. Unit
1.55 V
-V
10 mA
200 mA
60 ns
140 ns
- ns
-V
7.5 °C/W
2.5 °C/W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.A



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RFN20TJ6S
lElectrical Characteristic Curves
Data Sheet
100
10
1
Tj = 150°C
Tj = 125°C
0.1
Tj = 75°C
Tj = 25°C
0.01
0
500 1000 1500 2000 2500
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
Tj = 150°C
Tj = 125°C
Tj = 75°C
100 Tj = 25°C
10
1
0 100 200 300 400 500 600
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
100
f = 1MHz
Ta = 25°C
10
0
5 10 15 20 25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
1000
100
Tj = 25°C
10
IFSM
8.3ms 8.3ms
1cyc.
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.04 - Rev.A



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RFN20TJ6S
lElectrical characteristic curves
Data Sheet
1000
100
Tj = 25°C
100
10
Rth(j-a)
10
IFSM
time
1
1 10 100
TIME : t(ms)
IFSM-t CHARACTERISTICS
Rth(j-c)
1
0.1
0.001 0.01 0.1 1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
0A Io
0V
t
VR
16 D=t/T
D.C.
14
T VR=VRmax
Tj=150°C
D = 0.5
12 half sin wave
10 D = 0.2
8 D = 0.1
6
4
2
0
0 30 60 90 120 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
35
30 D.C.
25 D = 0.5
20
half sin wave
15
D = 0.2
10
D = 0.1
5
0A Io
0V
t
VR
D=t/T
T VR=VRmax
Tj=150°C
0
0 30 60 90 120 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.04 - Rev.A



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RFN20TJ6S
lElectrical characteristic curves
Data Sheet
70
60 D.C.
50 D = 0.5
half sin wave
40
D = 0.2
30 D = 0.1
20
10
0
0
Tj = 150°C
5 10 15 20 25 30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
35
40
35
IF=2IO
30
IF=IO
25
20
IF=IO /2
15
10
5
0
0
VR = 400V
IO = 20A
Tj = 100°C
200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-IRp CHARACTERISTICS
250
VR = 400V
IO = 20A
200 Tj = 100°C
150
IF=IO
IF=2IO
100
50
IF=IO /2
0
0 200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-trr CHARACTERISTICS
1800
1600
IF=2IO
1400
1200
1000
IF=IO
800
600
400
200
0
0
IF=IO /2
VR = 400V
IO = 20A
Tj = 100°C
200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-Qrr CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.04 - Rev.A



RFN20TJ6S datasheet pdf
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