RF6E045AJ Datasheet PDF - Rohm

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RF6E045AJ
Rohm

Part Number RF6E045AJ
Description Nch 30V 4.5A Middle Power MOSFET
Page 12 Pages


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RF6E045AJ
  Nch 30V 4.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
23.7mΩ
±4.5A
1W
lFeatures
1) Low on - resistance.
2) High Power Package (TUMT6).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TUMT6
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
CJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
Tj
Tstg
30
±4.5
±18
±12
1
150
-55 to +150
V
A
A
V
W
                                              
                                                                                        
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150403 - Rev.002    



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RF6E045AJ
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
Values
Min. Typ. Max.
- - 125
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V
Gate threshold voltage
VGS(th) VDS = VGS, ID = 1mA
Gate threshold voltage
temperature coefficient
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*3 VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 4.5A
Gate input resistance
RG f=1MHz, open drain
Forward Transfer
Admittance
|Yfs|*3 VDS = 5V, ID = 4.5A
Values
Unit
Min. Typ. Max.
30 - - V
- 18 - mV/
- - 1 μA
- - ±100 nA
0.5 - 1.5 V
- -2 - mV/
- 16.9 23.7
- 23.9 33.5
- 2.7 -
Ω
6 - -S
*1 Pw10μs , Duty cycle1%
*2 Mounted on a ceramic boad (30×30×0.8mm)
*3 Pulsed
                                             
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20150403 - Rev.002



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RF6E045AJ
      
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*3
tr*3
td(off)*3
tf*3
VGS = 0V
VDS = 15V
f = 1MHz
VDD 15V,VGS = 4.5V
ID = 2.2A
RL 6.8Ω
RG = 10Ω
        
Datasheet
Values
Min. Typ. Max.
- 900 -
- 100 -
- 70 -
- 15 -
- 15 -
- 40 -
- 10 -
Unit
pF
ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg*3
Qgs*3
Qgd*3
VDD 15V,
ID = 4.5A,
VGS = 4.5V
Values
Min. Typ. Max.
- 8.1 -
- 2.1 -
- 2.0 -
Unit
nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Body diode continuous
forward current
Body diode
pulse current
Forward voltage
Symbol
Conditions
IS
Ta = 25
ISP*1
VSD*3 VGS = 0V, IS = 0.8A
Min.
-
-
-
Values
Typ.
-
-
-
Max.
0.8
18
1.2
Unit
A
A
V
                                                                                          
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© 2015 ROHM Co., Ltd. All rights reserved.
3/11
20150403 - Rev.002



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RF6E045AJ
      
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
        
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal  
       Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power     
    dissipation
                                                                                          
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/11
20150403 - Rev.002



RF6E045AJ datasheet pdf
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Rohm
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