RF3220 Datasheet PDF - RF Micro Devices

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RF3220
RF Micro Devices

Part Number RF3220
Description HIGH LINEARITY/DRIVER AMPLIFIER
Page 10 Pages


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RF3220
0 HIGH LINEARITY/DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• Basestation Applications
• GSM/EDGE Systems
• Cellular and PCS Systems
• CDMA, W-CDMA Systems
• Final PA for Low-Power Applications
Product Description
The RF3220 is a high-efficiency GaAs Heterojunction
Bipolar Transistor (HBT) amplifier packaged in a low-cost
surface-mount package. This amplifier is ideal for use in
applications requiring high-linearity and low noise figure
over the 500MHz to 3GHz frequency range. The RF3220
operates from a single 5V power supply, and is assem-
bled in an economical 3mmx3mm QFN package.
2 PLCS
0.05 C
2 PLCS
-A-
3.00
0.10 C A
0.70
0.65
0.90
0.85
0.05
0.10 C B
0.00
2 PLCS
2 PLCS
0.10 C B
0.10 C A
2 PLCS
3.00
12°
MAX
2.75 SQ.
-B- Dimensions in mm.
SEATING
-C- PLANE
0.60
0.24
TYP
Shaded lead is pin 1.
0.10 M C A B
0.30
0.18
PIN 1 ID
R.20
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
12 11 10
GND 1
9 GND
RF IN 2
8 RF OUT
GND 3
7 GND
456
0.75
0.50
0.50
1.25
0.95
SQ.
Package Style: QFN, 12-Pin, 3x3
Features
• 500MHz to 2GHz
• +40.8dBm Output IP3
• +14.2dB Gain at 1850MHz
• +12.4dBm Input P1dB at 1850MHz
• 2.8dB Noise Figure at 1850MHz
• Single 5V Power Supply
Ordering Information
RF3220
High Linearity/Driver Amplifier
RF3220PCBA-41XFully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A1 050822
4-537



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RF3220
Absolute Maximum Ratings
Parameter
RF Input Power
Device Voltage
Device Current
Operating Temperature
Storage Temperature
Rating
+20
-0.5 to +6.0
250
-40 to +85
-40 to +150
Unit
dBm
V
mA
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Overall
AC Specifications
VCC=5V, RFIN=-10dBm, Freq=1850MHz,
with Temp=25°C unless otherwise noted.
Frequency
500
2000
MHz
Gain
12 14.2 15.5 dB
Input VSWR
1.2 1.5 SWR
Output VSWR
1.7 2.0 SWR
Reverse Isolation
20 23
Output IP3
36 40
dBm
F1= 1850MHz, F2=1851MHz
Output P1dB
23 +25.5
dBm
Noise Figure
2.9 3.3 dB
Thermal
ICC=160mA, PDISS=0.997W. (See Note.)
ThetaJC
76 °C/W
Maximum Measured Junction
Temperature at DC Bias Con-
153
°C TCASE=+85°C
ditions
Mean Time To Failures
5800
years
TCASE = +85 °C
DC Specifications
Device Voltage
4.5 5.0 5.5 V ICC=160mA
Operating Current Range
110 145 170 mA VCC=5V
Note: The RF3220 must be operated at or below 175mA in order to achieve the thermal performance listed above. While the RF3220
may be operated at higher bias currents, 175mA is the recommended bias to ensure the highest possible reliability and electrical
performance.
4-538
Rev A1 050822



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RF3220
Pin Function Description
1
GND
Ground connection.
2
RF IN
RF input pin. This pin is not internally DC-blocked. A DC blocking
capacitor suitable for the frequency of operation should be used.
Interface Schematic
To Bias
Circuit
RF IN
RF OUT
3
GND
Ground connection.
4
GND
Ground connection.
5
GND
Ground connection.
6
GND
Ground connection.
7
GND
Ground connection.
8
RF OUT Amplifier output pin. This pin is an open-collector output. It must be
See pin 2.
biased to VCC through a choke or matching inductor. This pin is typi-
cally matched to 50Ω with a shunt bias/matching inductor and series
blocking/matching capacitor. Refer to application schematics.
9
GND
Ground connection.
10
GND
Ground connection.
11
BIAS
This pin is used to control the bias current. An external resistor may be
used to set the bias current for any VPD voltage. Allows for trade-offs
between IP3 versus noise figure and TMAX.
VCC
12
Pkg
Base
GND
GND
Ground connection.
Ground connection. Vias to ground required under the package base.
Rev A1 050822
4-539



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RF3220
Application Schematic - 1850MHz
VCC
240 Ω
RF IN
3 pF
2.2 nH
12 11 10
19
28
37
456
10 nH
2.2 pF
RF OUT
4.7 nH
4-540
Rev A1 050822



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