RB521CS30L Datasheet PDF - NXP Semiconductors

www.Datasheet-PDF.com

RB521CS30L
NXP Semiconductors

Part Number RB521CS30L
Description 100 mA low VF MEGA Schottky barrier rectifier
Page 13 Pages


RB521CS30L datasheet pdf
Download PDF
RB521CS30L pdf
View PDF for Mobile


No Preview Available !

RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
Rev. 1 — 24 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Average forward current: IF(AV) 100 mA
„ Reverse voltage: VR 30 V
„ Low forward voltage: VF 350 mV
„ Low reverse current: IR 10 μA
„ AEC-Q101 qualified
„ Leadless ultra small SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
www.DataSheet4U.com
Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
average forward current
IR reverse current
VR reverse voltage
VF forward voltage
Conditions
square wave;
δ = 0.5; f = 20 kHz
Tamb 135 °C
Tsp 145 °C
VR = 10 V
IF = 10 mA
Min Typ Max Unit
[1] - - 100 mA
- - 100 mA
- 2 10 μA
- - 30 V
[2] - 280 350 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.02.



No Preview Available !

NXP Semiconductors
RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
12
Transparent
top view
Graphic symbol
12
sym001
Table 3. Ordering information
Type number
Package
Name
Description
RB521CS30L
-
leadless ultra small plastic package; 2 terminal;
body 1.0 × 0.6 × 0.5 mm
Version
SOD882
4. Marking
Table 4. Marking codes
Type number
RB521CS30L
Marking code
AR
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
IF(AV)
reverse voltage
average forward current
square wave; δ = 0.5;
f = 20 kHz
-
Tamb 135 °C
Tsp 145 °C
IFSM non-repetitive peak forward half sine wave;
current
tp 8.3 ms
[1] -
-
[2] -
Max Unit
30 V
100 mA
100 mA
3A
www.DataSheet4U.com
RB521CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 January 2011
© NXP B.V. 2011. All rights reserved.
2 of 13



No Preview Available !

NXP Semiconductors
RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation
Tamb 25 °C
[4][3] -
[4][1] -
Tj
Tamb
junction temperature
ambient temperature
-
65
Tstg storage temperature
65
Max
315
565
150
+150
+150
Unit
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Tj = 25 °C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1][2]
[3] - - 395 K/W
[4] - - 220 K/W
[5] - - 70 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Soldering point of cathode tab.
www.DataSheet4U.com
RB521CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 January 2011
© NXP B.V. 2011. All rights reserved.
3 of 13



No Preview Available !

NXP Semiconductors
RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
10
0
0.02
0.01
006aac500
1
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
006aac501
1
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
www.DataSheet4U.com
RB521CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 January 2011
© NXP B.V. 2011. All rights reserved.
4 of 13



RB521CS30L datasheet pdf
Download PDF
RB521CS30L pdf
View PDF for Mobile


Related : Start with RB521CS30 Part Numbers by
RB521CS30L 100 mA low VF MEGA Schottky barrier rectifier RB521CS30L
NXP Semiconductors
RB521CS30L pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact