RB521CS30L Datasheet PDF - NXP Semiconductors

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RB521CS30L
NXP Semiconductors

Part Number RB521CS30L
Description 100 mA low VF MEGA Schottky barrier rectifier
Page 13 Pages


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RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
Rev. 1 — 24 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Average forward current: IF(AV) 100 mA
„ Reverse voltage: VR 30 V
„ Low forward voltage: VF 350 mV
„ Low reverse current: IR 10 μA
„ AEC-Q101 qualified
„ Leadless ultra small SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
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Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
average forward current
IR reverse current
VR reverse voltage
VF forward voltage
Conditions
square wave;
δ = 0.5; f = 20 kHz
Tamb 135 °C
Tsp 145 °C
VR = 10 V
IF = 10 mA
Min Typ Max Unit
[1] - - 100 mA
- - 100 mA
- 2 10 μA
- - 30 V
[2] - 280 350 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.02.

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RB521CS30L 100 mA low VF MEGA Schottky barrier rectifier RB521CS30L
NXP Semiconductors
RB521CS30L pdf

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