RB501SM-30 Datasheet PDF - Rohm

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RB501SM-30
Rohm

Part Number RB501SM-30
Description Schottky Barrier Diode
Page 6 Pages


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Schottky Barrier Diode
RB501SM-30
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
(1)
lLand Size Figure (Unit : mm)
0.8
lFeatures
1) Ultra small mold type
(EMD2)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
0.6±0.1
ROHM : EMD2
JEDEC : SOD-523
JEITA : SC-79
: Year, week and factory
lTaping Dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ 1.5±0.05
f1.50.05
EMD2
lStructure (1) Cathode
(2) Anode
0.2±0.05
0.95±0.06
0
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Emptypocket 4.0±0.1
Conditions
2.0±0.05
fφ0.05.5
0.2
0.76±0.05
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
30
100
1000
125
V
mA
mA
°C
Storage temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10mA - - 0.35 V
Reverse current
IR
VR=10V
- - 10 mA
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A



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RB501SM-30
lElectrical Characteristic Curves
Data Sheet
1000
100 Tj = 125°C
10
1
0.1
Tj = 75°C
Tj = 25°C
Tj = -25°C
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
Tj = 125°C
Tj = 75°C
1 Tj = 25°C
0.1
0.01
0
Tj = -25°C
10 20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
30
100 300
Tj = 25°C
f = 1MHz
295
290
Tj=25°C
IF=10mA
n=30pcs
285
10 280
Ave. : 270.2mV
275
270
265
1
0 5 10 15 20
260
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A



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RB501SM-30
lElectrical Characteristic Curves
40
Tj=25°C
35 VR=10V
n=30pcs
30
25
20
15
10 Ave. : 2.4mA
5
0
IR DISPERSION MAP
Data Sheet
50
45 Tj=25°C
f=1MHz
40 VR=0V
n=10pcs
35
30
25 Ave. : 17pF
20
15
10
Ct DISPERSION MAP
40
35
IFSM 1cyc
30
8.3ms
Ta=25°C
25
20
15
10 Ave. : 3.9A
5
0
IFSM DISPERSION MAP
45
40
Tj=25°C
IF=0.1A
35 IR=0.1A
Irr / IR=0.10
30 n=10pcs
25
20
Ave. : 13.2ns
15
10
5
0
trr DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A



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RB501SM-30
lElectrical Characteristic Curves
10 10
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
Data Sheet
IFSM
time
1cyc
Ta=25°C
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
1 10 100
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.10
0.08
Tj = 125°C
0.06 D = 1/2
Sin(θ=180)
0.04
DC
0.02
0.00
0
50 100 150
AVERAGE RECTIFIED
FORWARD CURRENT : Io(mA)
Io-PF CHARACTERISTICS
200
0.15
Tj = 125°C
0.10
Sin(θ=180)
0.05 D = 1/2
DC
0.00
0
10 20
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
30
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© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.01 - Rev.A



RB501SM-30 datasheet pdf
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Rohm
RB501SM-30 pdf

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