RB238T150 Datasheet PDF - Rohm

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RB238T150
Rohm

Part Number RB238T150
Description Schottky Barrier Diode
Page 6 Pages


RB238T150 datasheet pdf
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Schottky Barrier Diode
RB238T150
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±00..21
lStructure
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3)
Anode Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
150 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load,Tc=85ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
150
40
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=20A
Reverse current
IR VR=150V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.87 V
- - 30 mA
- - 2 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A



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RB238T150
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
Tj = 125°C
10 Tj = 75°C
1
Tj = 25°C
0.1
0.01
Tj = -25°C
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
100 Tj = 125°C
10
Tj = 75°C
1
0.1
0.01
0.001
Tj = 25°C
Tj = -25°C
0.0001
0
50 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
150
10000
Tj = 25°C
f = 1MHz
860
850
840
Tj=25°C
IF=20A
n=30pcs
830
1000
820
810 Ave. : 786.7mV
800
790
780
100
0
5 10 15 20 25 30
770
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A



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RB238T150
lElectrical Characteristic Curves
Data Sheet
2.8
2.6
Tj=25°C
VR=150V
2.4 n=30pcs
2.2
2
1.8 Ave. : 1.3mA
1.6
1.4
1.2
1
0.8
IR DISPERSION MAP
1900
1800
1700
1600
1500
Tj=25°C
f=1MHz
VR=0V
n=10pcs
Ave. : 1630pF
Ct DISPERSION MAP
750
700
650
600
IFSM 1cyc
8.3ms
Ta=25°C
550
500 Ave. : 418A
450
400
350
300
IFSM DISPERSION MAP
50
Tj=25°C
45 IF=0.5A
IR=1.0A
40 Irr / IR=0.25
n=10pcs
35
30
Ave. : 22.2ns
25
20
15
10
trr DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A



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RB238T150
lElectrical Characteristic Curves
1000
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
1000
Data Sheet
IFSM
time
1cyc
Ta=25°C
100
1
10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
70
Tj = 150°C
60
50
D = 1/2
40
30 Sin(θ=180)
20 DC
10
0
0 20 40 60 80
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
2.0
Tj = 150°C
1.5
1.0
Sin(θ=180)
D = 1/2
0.5 DC
0.0
0
50 100
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
150
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© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.01 - Rev.A



RB238T150 datasheet pdf
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RB238T150 pdf
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