RB238T100 Datasheet PDF - Rohm

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RB238T100
Rohm

Part Number RB238T100
Description Schottky Barrier Diode
Page 6 Pages


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Schottky Barrier Diode
RB238T100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±00..21
lStructure
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3)
Anode Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load,Tc=85ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
40
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=20A
Reverse current
IR VR=100V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.86 V
- - 20 mA
- - 2 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A



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RB238T100
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
Tj = 125°C
10
Tj = 75°C
1
0.1
0.01
Tj = 25°C
Tj = -25°C
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
100
10
1
Tj = 125°C
Tj = 75°C
Tj = 25°C
0.1
0.01
Tj = -25°C
0.001
0
20 40 60 80
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100
10000
Tj = 25°C
f = 1MHz
840
830
820
Tj=25°C
IF=20A
n=30pcs
1000
810
800
790
100 780 Ave. : 769.5mV
770
760
10
0
5 10 15 20 25 30
750
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
\
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© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A



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RB238T100
lElectrical Characteristic Curves
Data Sheet
2.2
2.0 Tj=25°C
VR=100V
1.8 n=30pcs
1.6
1.4
1.2
1.0 Ave. : 0.7mA
0.8
0.6
0.4
0.2
0.0
IR DISPERSION MAP
2200
2100
2000
1900
1800
Tj=25°C
f=1MHz
VR=0V
n=10pcs
Ave. : 1904pF
Ct DISPERSION MAP
750
700
650
600
IFSM 1cyc
8.3ms
Ta=25°C
550
500 Ave. : 426A
450
400
350
300
IFSM DISPERSION MAP
60
Tj=25°C
55 IF=0.5A
IR=1.0A
50 Irr / IR=0.25
n=10pcs
45
40
35
30 Ave. : 24.7ns
25
20
trr DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A



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RB238T100
lElectrical Characteristic Curves
1000
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
1000
Data Sheet
IFSM
time
1cyc
Ta=25°C
100
1
10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
70
Tj = 150°C
60
50
40 D = 1/2
Sin(θ=180)
30
20 DC
10
0
0 20 40 60 80
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
1.0
Tj = 150°C
0.8
0.6
0.4 Sin(θ=180)
D = 1/2
DC
0.2
0.0
0
20 40 60 80
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
100
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© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.01 - Rev.A



RB238T100 datasheet pdf
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RB238T100 pdf
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