RB088T100 Datasheet PDF - Rohm

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RB088T100
Rohm

Part Number RB088T100
Description Schottky Barrier Diode
Page 6 Pages


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Schottky Barrier Diode
RB088T100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±00..21
lStructure
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3)
Anode Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, IO/2 per diode, Tc=137ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
10
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=5A
Reverse current
IR VR=100V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.87 V
- - 5 mA
- - 2 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A



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RB088T100
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10 Tj = 125°C
1
Tj = 75°C
0.1 Tj = 25°C
0.01
Tj = -25°C
0.001
0 200 400 600 800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10
1
0.1
0.01
0.001
0
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = -25°C
20 40 60 80 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
Tj = 25°C
f = 1MHz
760
755
750
Tj=25°C
IF=5A
n=30pcs
745
100 740
Ave. : 731.5mV
735
730
725
10
0
720
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A



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RB088T100
lElectrical Characteristic Curves
Data Sheet
500
Tj=25°C
450 VR=100V
400 n=30pcs
350
300
250 Ave. : 151nA
200
150
100
50
IR DISPERSION MAP
580
570 Tj=25°C
f=1MHz
560 VR=0V
n=10pcs
550
540
530 Ave. : 514pF
520
510
500
Ct DISPERSION MAP
500
450
400
350
IFSM 1cyc
8.3ms
Ta=25°C
300
Ave. : 231A
250
200
150
100
50
IFSM DISPERSION MAP
40
35
30
25
20
15
10
5
0
Tj=25°C
IF=0.5A
IR=1.0A
Irr / IR=0.25
n=10pcs
Ave. : 8.2ns
trr DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A



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RB088T100
lElectrical Characteristic Curves
1000
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
1000
Data Sheet
IFSM
time
1cyc
Ta=25°C
100
1
10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
16
14
12
10
8
6
4
2
0
0
Tj = 150°C
D = 1/2
Sin(θ=180)
DC
5 10 15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
20
0.04
0.03
Tj = 150°C
0.02
Sin(θ=180)
D = 1/2
0.01 DC
0.00
0
20 40 60 80
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
100
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© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.01 - Rev.A



RB088T100 datasheet pdf
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RB088T100 pdf
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