RB088NS100 Datasheet PDF - Rohm

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RB088NS100
Rohm

Part Number RB088NS100
Description Schottky Barrier Diode
Page 6 Pages


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Schottky Barrier Diode
RB088NS100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
(2)
RB088
NS100
1
(1) (3)
lLand Size Figure (Unit : mm)
11
9.9
2.5
2.54
LPDS
2.54
ROHM : LPDS
JEITA : TO263S
1 : Manufacture Date
lStructure
(2) Cathode
lTaping Dimensions (Unit : mm)
(1) Anode
(3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, IO/2 per diode, Tc=137ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
10
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=5A - - 0.87 V
IR
VR=100V
- - 5 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A

RB088NS100 datasheet pdf
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RB088NS100 Schottky Barrier Diode RB088NS100
Rohm
RB088NS100 pdf

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