R0472YC16F Datasheet PDF - IXYS


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R0472YC16F
IXYS

Part Number R0472YC16F
Description Distributed Gate Thyristor
Page 12 Pages

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Date:- 23 Oct 2014
Data Sheet Issue:- 2
Distributed Gate Thyristor
Types R0472YC12x to R0472YC16x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200 -1600
1200 -1600
1200 -1600
1300 - 1700
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
472
316
185
945
789
4300
4700
92.5×103
110.5×103
500
1000
5
2
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2
Page 1 of 12
October, 2014



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Characteristics
Distributed Gate Thyristor types R0472YC12x to R0472YC16x
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time, 50% Chord
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
20
25
-
-
5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 2.80 ITM=1000A
V
- 3.24 ITM=1416A
V
- 1.648
V
- 1.125
m
- - VD=80% VDRM, Linear ramp, Gate o/c
V/s
- 60 Rated VDRM
mA
- 60 Rated VRRM
mA
- 3.0
Tj=25°C
- 200
VD=10V, IT=3A
V
mA
- 0.25 Rated VDRM
V
- 1000 Tj=25°C
mA
0.4 1.0 VD=67% VDRM, ITM=2000A, di/dt=60A/µs,
1.0 2.0 IFG=2A, tr=0.5µs, Tj=25°C
µs
155 175
µC
70 -
µC
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
60 -
A
2.5 -
µs
-
-
25
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
30
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.05 Double side cooled
K/W
- 0.10 Single side cooled
K/W
-9
kN
90 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2
Page 2 of 12
October, 2014



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Distributed Gate Thyristor types R0472YC12x to R0472YC16x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
1200
1600
VDRM VDSM VRRM
V
1200
1600
VRSM
V
1300
1700
VD VR
DC V
810
1020
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2
Page 3 of 12
October, 2014



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Distributed Gate Thyristor types R0472YC12x to R0472YC16x
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max
1
tpulsetq tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(JK) be the steady-state d.c. thermal resistance (junction to sink)
and TK be the heat sink temperature.
Then the average dissipation will be:
 WAV EP f and TK(max .) 125 WAV RthJK
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150s integration time i.e.
(iii)
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2
Page 4 of 12
150s
Qrr irr.dt
0
K Factor t1
t2
October, 2014




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