QIS1790001 Datasheet PDF - Powerex


www.Datasheet-PDF.com

QIS1790001
Powerex

Part Number QIS1790001
Description Single IGBT Module
Page 8 Pages

QIS1790001 datasheet pdf
View PDF for PC
QIS1790001 pdf
View PDF for Mobile


No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIS1790001 Preliminary
Single IGBT Module
900 Amperes/1700 Volts
Note: All electrical characteristics scaled from 300A module CM300DX-34SA.
X (2 TYP.)
A
C
M
DE
S
W (4 TYP.)
H
V
P
TB
U
(2 TYP.)
QL
GN
J
R
Y
J
F
K
E
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 4.33
110.0
B 3.15
80.0
C 3.66±0.008 93.0±0.25
D 2.44±0.008 62.0±0.25
E 1.57
40.0
F 1.42 Max. 36.0 Max.
G 1.14
29.0
H 1.00 Max. 25.5 Max.
J 0.89
22.5
K 0.93
23.5
L 0.83
21.0
M 0.63
16.0
C
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Inches
0.69
0.79
0.51
0.43
0.43
0.35
M8 Metric
0.16
0.256 Dia.
M4 Metric
0.24
Millimeters
17.5
20.0
13.0
11.0
11.0
9.0
M8
4.0
6.5 Dia.
M4
6.0
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
11/14 Rev. 3
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1



No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1790001
Single IGBT Module
900 Amperes/1700 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V)
VCES 1700 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (DC, TC = TBD°C)*2,*4 IC 900 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 1800 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot TBD Watts
Emitter Current (TC = TBD°C)*2,*4
IE*1 900 Amperes
Emitter Current (Pulse, Repetitive)*3
IERM*1 1800 Amperes
Maximum Junction Temperature
Tj(max) 175 °C
Maximum Case Temperature*2 TC(max) 125 °C
Operating Junction Temperature
Tj(op)
-40 to +150
°C
Storage Temperature
Tstg
-40 to +125
°C
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
VISO 3500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 3



No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1790001
Single IGBT Module
900 Amperes/1700 Volts
Preliminary
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ.
Collector-Emitter Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 90mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 900A, VGE = 15V, Tj = 25°C*6
IC = 900A, VGE = 15V, Tj = 125°C*6
IC = 900A, VGE = 15V, Tj = 150°C*6
Input Capacitance
Cies
Output Capacitance
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
Gate Charge
QG VCC = 1000V, IC = 900A, VGE = 15V
Turn-on Delay Time
td(on)
Rise Time
tr VCC = 1000V, IC = 900A, VGE = ±15V,
Turn-off Delay Time
td(off)
RG = 0Ω, Inductive Load
Fall Time
tf
Emitter-Collector Voltage
VEC*1
IE = 900A, VGE = 0V, Tj = 25°C*6
IE = 900A, VGE = 0V, Tj = 125°C*6
IE = 900A, VGE = 0V, Tj = 150°C*6
Reverse Recovery Time
trr*1 VCC = 1000V, IE = 900A, VGE = ±15V
Reverse Recovery Charge
Qrr*1
RG = 0Ω, Inductive Load
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Eon VCC = 1000V, IC = IE = 900A,
Eoff VGE = ±15V, RG = 0Ω,
Reverse Recovery Energy per Pulse
Err*1
Tj = 150°C, Inductive Load
Internal Lead Resistance
RCC' + EE'
Main Terminals-Chip,
TC = 25°C*2
Internal Gate Resistance
rg
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
— —
— —
5.4 6.0
— 2.0
— 2.2
— 2.25
— —
— —
— —
— 4968
— 400
— 100
— 700
— 600
— 4.1
— 2.9
— 2.7
— —
— 42
— 114
— 240
— 207
— —
— 0.56
Max.
3
15
6.6
2.5
156
6.6
1.56
5.3
300
TBD
Units
mA
µA
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
11/14 Rev. 3
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3



No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1790001
Single IGBT Module
900 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
Thermal Resistance Characteristics
Characteristics
Thermal Resistance, Junction to Case*2
Thermal Resistance, Junction to Case*2
Contact Thermal Resistance,
Case to Heatsink*2
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Test Conditions
Per Inverter IGBT
Per Inverter FWDi
Thermal Grease Applied
Mechanical Characteristics
Mounting Torque
Creepage Distance
ds
Clearance
da
Weight
Flatness of Baseplate
m
ec
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage
VCC
Gate (-Emitter Drive) Voltage
VGE(on)
External Gate Resistance
RG
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
The heatsink thermal resistance should be measured just under the chips.
Mounting to Terminal, M8 Screw
Mounting to Terminal, M4 Screw
Mounting to Heatsink, M6 Screw
Terminal to Terminal
Terminal to Baseplate
Terminal to Terminal
Terminal to Baseplate
On Centerline X, Y
Applied Across C-E
Applied Across G-E
Per Switch
Preliminary
Min. Typ. Max. Units
— 18
— K/kW
— 28
— K/kW
— 15 — K/kW
——
——
— —
TBD
TBD
TBD
TBD
— 600
-100 —
95
15
40
+100
in-lb
in-lb
in-lb
mm
mm
mm
mm
Grams
µm
— 1000
13.5 15.0
0—
1200
16.5
9
Volts
Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 11/14 Rev. 3




QIS1790001 datasheet pdf
Download PDF
QIS1790001 pdf
View PDF for Mobile


Similiar Datasheets : QIS1790001

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact