QIS1260015 Datasheet PDF - Powerex


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QIS1260015
Powerex

Part Number QIS1260015
Description IGBT Module
Page 5 Pages

QIS1260015 datasheet pdf
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIS1260015 Preliminary
Single IGBTMOD™
NX-Series Module
600 Amperes/1200 Volts
A
D
E
JF
G
H
Q
ST U
R
ST
QU
W
VX
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47 24
48 23
DETAIL "B"
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
M LK
N
DETAIL "A"
KP L
AK
JY
(4 PLACES)
AD
AE
AF
AA B
Z AB
AG
AC (4 PLACES)
AJ
AH
AL
AMC
AT
AU
AW
AV
AX
DETAIL "B"
E(24) E(23)
C(22)
E1(16)
AP
AN AQ
AR
AS
G1(15)
Th
NTC
C(47) C(48) TH1
(1)
TH2
(2)
DETAIL "A"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
Millimeters
5.98 152.0
2.44 62.0
0.67 17.0
5.39
137.0
4.79 121.7
4.33±0.02 110.0±0.5
3.89 99.0
3.72 94.5
0.53 13.5
0.15 3.8
0.28 7.25
0.30 7.75
1.95 49.54
0.9 22.86
0.55 14.0
0.87 22.0
0.67 17.0
0.48 12.0
0.24 6.0
0.16 4.2
0.37 6.5
0.83 21.14
M6 M6
Dimensions
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53 39.0
1.97±0.02 50.0±0.5
2.26 57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.02 17.0+1.0/-0.5
0.51 13.0
0.27 7.0
0.03 0.8
0.81 20.5
0.12 3.0
0.14 3.5
0.21 5.4
0.49 12.5
0.15 3.81
0.05 1.15
0.025
0.65
0.29 7.4
0.24 6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06 1.5
0.49 12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse connected rectifier grade
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Rectifier Grade
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
QIS1260015 is a 1200V (VCES),
600 Ampere Single IGBTMOD™
Power Module.
12/10 Rev. 1
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Module Weight (Typical)
Baseplate Flatness, On Centerline X, Y (See Below)
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
Symbol QIS1260015 Units
Tj
Tstg
-40 to 150
-40 to 125
31
°C
°C
in-lb
— 40 in-lb
— 330 Grams
±0 ~ +100
µm
VISO 2500 Volts
Inverter Sector
Collector-Emitter Voltage (VGE = 0V)
VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (DC, TC = 90°C)*1,*5,*9 IC 600 Amperes
Peak Collector Current (Pulse)*4 ICM 1200 Amperes
Maximum Collector Dissipation (TC = 25°C)*1,*5 PC 3785 Watts
Emitter Currentt (TC = 25°C)*1,*5,*9
IE*3 600 Amperes
Peak Emitter Current (Pulse)*4 IEM*3 1200 Amperes
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*9 Use both of each main terminal (collector and emitter) to connect external wiring.
BASEPLATE FLATNESS
MEASUREMENT POINT
Y
X
– : CONCAVE
+ : CONVEX
HEATSINK SIDE
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
IGBT FWDi NTC Thermistor
0
38.1
50.6
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47 24
48 23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
Dimensions in mm (Tolerance: ±1mm)
2 12/10 Rev. 1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Preliminary
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
ICES
VGE(th)
IGES
VCE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Turn-on Rise Time
Switch
Turn-off Delay Time
Time
Turn-off Fall Time
Emitter-Collector Voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC*3
VCE = VCES, VGE = 0V
IC = 60mA, VCE = 10V
VGE = VGES, VCE = 0V
IC = 600A, VGE = 15V, Tj = 25°C*6
IC = 600A, VGE = 15V, Tj = 125°C*6
IC = 600A, VGE = 15V, Tj = 150°C*6
VCE = 10V, VGE = 0V
VCC = 600V, IC = 600A, VGE = 15V
VCC = 600V, IC = 600A,
VGE = ±15V,
RG = 2.2Ω, IE = 600A,
Inductive Loas Switching Operation
IE = 600A, VGE = 0V, Tj = 25°C*6
IE = 600A, VGE = 0V, Tj = 125°C*6
Min.
6
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Module Lead Resistance
Thermal Resistance, Junction to Case*1
Thermal Resistance, Junction to Case*1
Contact Thermal Resistance*1
(Case to Heatsink)
Rlead
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Main Termnals-Chip (Per Switch)
Per IGBT
Per FWDi
Thermal Grease Applied
(Per 1 Module)*2
Internal Gate Resistance
External Gate Resistance
RGint
RG
TC = 25°C
TC = 125°C
Min.
0.7
1.4
1.0
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Zero Power Resistance
R TC = 25°C
Deviation of Resistance
R/R
TC = 100°C, R100 = 493Ω
B Constant
B(25/50)
Approximate by Equation*9
Power Dissipation
P25 TC = 25°C
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m K)].
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*9
B(25/50)
=
In(
RR5205)/(
1
T25
1
T50
)
R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
[K],
Min.
4.85
–7.3
Typ.
7
2.0
2.2
1.9
3000
1.0
0.9
Max.
1.0
8
0.5
2.6
100
9.0
2.0
660
190
700
600
1.2
1.1
Units
mA
Volts
μA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Typ.
0.6
0.015
Max.
0.033
0.028
Units
mΩ
°C/W
°C/W
°C/W
1.0 1.3
2.0 2.6
— 10
Ω
Ω
Ω
Typ.
5.00
3375
Max.
5.15
+7.8
10
Units
kΩ
%
K
mW
12/10 Rev. 1
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Preliminary
1200
1000
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
VGE =
20V
15 13 Tj = 25°C
800
12
600
400 11
200 10
9
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE
(INVERTER PART
-VTSY. PVICCEAL)
103
VGE = 0V
102 Cies
Coes
101
100 Cres
10-1
10-1 100 101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GA(TINEVCEHRATREGREPVASR.TV)GE
20
IC = 600A
16
VCC = 400V
12 VCC = 600V
8
4
0
0 1000 2000 3000 4000 5000
GATE CHARGE, QG, (nC)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
4
VGE = 15V
Tj = 25°C
3 Tj = 125°C
2
1
0
0
104
200 400 600 800 1000 1200
COLLECTOR-CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
103 tf
td(on)
td(off)
102 VCC = 600V
VGE = ±15V
RG = 1.0
Tj = 125°C
Inductive Load
101
101
102
tr
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
102
101
100
101
VCC = 600V
VGE = ±15V
RG = 1.0
Tj = 125°C
Inductive Load
Eon
Eoff
102
COLLECTOR CURRENT, IC, (AMPERES)
103
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
Tj = 25°C
8
6 IC = 1200A
IC = 600A
4 IC = 240A
2
0
6 8 10 12 14 16 18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
104
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
20
103
td(off)
td(on)
tr
tf
102
100
103
101
GATE RESISTANCE, RG, ()
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
102
102
101
100
100
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
Eon
Eoff
101
GATE RESISTANCE, RG, ()
102
4 12/10 Rev. 1




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