QIF4515002 Datasheet PDF - Powerex


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QIF4515002
Powerex

Part Number QIF4515002
Description Dual Common Collector HVIGBT Module
Page 5 Pages

QIF4515002 datasheet pdf
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIF4515002 Preliminary
Dual Common Collector
HVIGBT Module
150 Amperes/4500 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
61
5
4
2
8
73
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A
5.51 140.0
B
2.87
73.0
C
1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01 57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Dimensions Inches Millimeters
L 0.69±0.01 17.5±0.25
M
0.38
9.75
N
0.20
5.0
P
0.22
5.5
Q
1.44
36.5
R
0.16
4.0
S
M6 Metric
M6
T
0.63 Min. 16.0 Min.
U
0.11 x 0.02 2.8 x 0.5
V
0.28 Dia.
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 2
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIF4515002
Dual Common Collector HVIGBT Module
150 Amperes/4500 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +125°C)
Collector-Emitter Voltage (VGE = 0V, Tj = -50°C)
Gate-Emitter Voltage (VCE = 0V)
Collector Current, DC (TC = 82°C)
Peak Collector Current (Pulse)
Diode Forward Current**
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C)
Symbol QIF4515002 Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
VCES 4500 Volts
VCES 4400 Volts
VGES ±20 Volts
IC 150 Amperes
ICM 300* Amperes
IF 150 Amperes
IFM 300* Amperes
I2t 10 kA2sec
PC 1500 Watts
— 44 in-lb
— 44 in-lb
— 900 Grams
Viso 9.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V
Gate Leakage Current
IGES VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th) IC = 13.3mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C
IC = 150A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG VCC = 2800V, IC = 150A, VGE = 15V
Emitter-Collector Voltage**
VEC IE = 150A, VGE = 0V, Tj = 25°C
IE = 150A, VGE = 0V, Tj = 125°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics od rhw anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
5.8
Typ.
6.3
3.8
4.6
1.5
2.8
3.2
Max.
1.8
0.5
6.8
5.5
3.8
Units
mA
µA
Volts
Volts
Volts
µC
Volts
Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 2



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIF4515002
Dual Common Collector HVIGBT Module
150 Amperes/4500 Volts
Preliminary
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes VGE = 0V, VCE = 10V, f = 100kHz
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on) VCC = 2800V, IC = 133A,
Load
Rise Time
tr VGE = ±15V, RG(on) = 24.3Ω,
Switching
Turn-off Delay Time
td(off) RG(off) = 90Ω, LS = 150nH
Times
Fall Time
tf
Inductive Load
Turn-on Switching Energy
Eon Tj = 125°C, IC = 133A, VGE = ±15V,
Turn-off Switching Energy
Eoff RG(on) = 24.3Ω, RG(off) = 90Ω,
VCC = 2800V, LS = 150nH , Inductive Load
Diode Reverse Recovery Time**
trr VCC = 2800V, IE = 133A,
Diode Reverse Recovery Charge**
Qrr VGE = ±15V, RG(on) = 24.3Ω,
Diode Reverse Recovery Energy
Erec LS = 150nH, Inductive Load
Stray Inductance (C1-E2)
LSCE
Lead Resistance Terminal-Chip
RCE
Min.
Typ.
Max. Units
— 19 — nF
— 1.22 —
nF
— 0.55 — nF
— 1.00 —
µs
— 0.30 —
µs
— 3.6 — µs
— 0.36 — µs
— 0.55 —
J/P
— 0.34 —
J/P
— 0.7 — µs
— 111* —
µC
— 172 — mJ/P
— 60 — nH
— 0.8 — mΩ
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case*** Rth(j-c) Q
Per IGBT
Thermal Resistance, Junction to Case*** Rth(j-c) D
Per FWDi
Contact Thermal Resistance, Case to Fin
Rth(c-f)
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Comparative Tracking Index
CTI
Clearance Distance in Air (Terminal to Base)
Creepage Distance Along Surface
(Terminal to Base)
da(t-b)
ds(t-b)
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Min.
Typ.
Max. Units
— — 0.083 °K/W
— — 0.157 °K/W
— 0.018 — °K/W
600 —
35.0 — — mm
64 — — mm
19 — — mm
54 — — mm
11/14 Rev. 2
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIF4515002
Dual Common Collector HVIGBT Module
150 Amperes/4500 Volts
Preliminary
OUTPUT CHARACTERISTICS
(TYPICAL)
275
Tj = 25°C
15
13
220 VGE = 16V
11
165
10
110
55
0
0 2 4 68
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
275
220
165
110
55
Tj = 25°C
Tj = 125°C
0
01 234 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
1.76
1.54
1.32
1.10
0.88
0.66
0.44
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 2800V
VGE = ±15V
RG(on) = 24.3
RG(off) = 90
Ls = 150nH
Tj = 125°C
Inductive Load
Eon
Eoff
Erec
0.22
0
0 55 110 165 220 275
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
275
220
VGE = 15V
Tj = 25°C
Tj = 125°C
165
110
55
0
0
111.0
246
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
CAPACITANCE VS.
(TYPICAL)
VCE
8
11.1
Cies
1.11
Coes
VGE = 0V
Tj = 25°C
f = 100 kHz
0.11
10-1
100
Cres
101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1.32
1.10
0.88
0.66
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 2800V
VGE = ±15V
IC = 133A
Ls = 150nH
Tj = 125°C
Inductive Load
Eon
Erec
0.44
0.22
0
0 9 18 27 36 45
GATE RESISTANCE, RG, ()
TRANSFER CHARACTERISTICS
(TYPICAL)
275
VCE = VGE
220
Tj = 25°C
Tj = 150°C
165
110
55
0
0 4 8 12 16
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
VCE = 2800V
15 IC = 133A
Tj = 25°C
10
5
0
-5
-10
-15
0
0.55 1.10 1.65
GATE CHARGE, QG, (μC)
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1.32
1.10
0.88
0.66
VCC = 2800V
VGE = ±15V
IC = 133A
Ls = 150nH
Tj = 125°C
Inductive Load
Eoff
2.20
0.44
0.22
0
0 45 90 135 180
GATE RESISTANCE, RG, ()
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 11/14 Rev. 2




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