QID6508001 Datasheet PDF - Powerex


www.Datasheet-PDF.com

QID6508001
Powerex

Part Number QID6508001
Description Dual IGBT HVIGBT Module
Page 7 Pages

QID6508001 datasheet pdf
View PDF for PC
QID6508001 pdf
View PDF for Mobile


No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID6508001 Preliminary
Dual IGBT
HVIGBT Module
85 Amperes/6500 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
41
5
6
2
8
73
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A
5.51 140.0
B
2.87
73.0
C
1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01 57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Dimensions Inches Millimeters
L 0.69±0.01 17.5±0.25
M
0.38
9.75
N
0.20
5.0
P
0.22
5.5
Q
1.44
36.5
R
0.16
4.0
S
M6 Metric
M6
T
0.63 Min. 16.0 Min.
U
0.11 x 0.02 2.8 x 0.5
V
0.28 Dia.
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 2
Information presented is based upon manufacturers testing and projected capabilities.This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1



No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID6508001
Dual IGBT HVIGBT Module
85 Amperes/6500 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
QID6508001 Units
Junction Temperature
Tj
-40 to +150
°C
Storage Temperature
Tstg
-40 to +125
°C
Collector-Emitter Voltage (VGE = 0V)
VCES
Tj = -40°C
5800
Volts
Tj = +25°C
6300
Volts
Tj = +125°C
6500
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (TC = 110°C)
IC
85 Amperes
Peak Collector Current (Pulse)
ICM 170*2 Amperes
Diode Forward Current (TC = 102°C)*1 IF
85 Amperes
Diode Forward Surge Current (Pulse)*1 IFM 170*2 Amperes
Maximum Collector Dissipation
PC 1100 Watts
(TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
44 in-lb
Mounting Torque, M6 Mounting Screws
44 in-lb
Module Weight (Typical)
900 Grams
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 6900 VRMS, V2 = 5200 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 4500V, VGE = ±15V, Tj = 125°C)
Viso 9.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V, Tj = 25°C
VCE = VCES, VGE = 0V, Tj = 125°C
Gate Leakage Current
IGES VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th) IC = 13mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat) IC = 85A, VGE = 15V, Tj = 25°C
IC = 85A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG VCC = 3600V, IC = 85A, VGE = 15V
Emitter-Collector Voltage*1 VEC IE = 85A, VGE = 0V, Tj = 25°C
IE = 85A, VGE = 0V, Tj = 125°C
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min.
5.8
Typ. Max. Units
— 3 mA
3 — mA
— 0.5 µA
6.3 6.8 Volts
3.8*3 — Volts
4.8 5.6 Volts
1.05
µC
3.3 — Volts
3.4 4.2 Volts
Information presented is based upon manufacturers testing and projected capabilities.This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 2



No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID6508001
Dual IGBT HVIGBT Module
85 Amperes/6500 Volts
Preliminary
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
f = 100kHz
Resistive
Turn-on Delay Time
td(on) VCC = 3600V, IC = 85A,
Load
Rise Time
tr VGE = ±15V,
Switching
Turn-off Delay Time
td(off) RG(on) = 30Ω, RG(off) = 300Ω,
Times
Fall Time
tf
Inductive Load
Turn-on Switching Energy
Eon Tj = 125°C, IC = 85A, VGE = ±15V,
Turn-off Switching Energy
Eoff RG(on) = 30Ω, RG(off) = 300Ω,
VCC = 3600V, Inductive Load
Diode Reverse Recovery Time*1 trr VCC = 3600V, IE = 85A,
Diode Reverse Recovery Charge*1 Qrr VGE = ±15V, RG(on) = 30Ω,
Diode Reverse Recovery Energy
Erec
Inductive Load, Tj = 125°C
Stray Inductance (C1-E2)
LSCE
Lead Resistance Terminal-Chip
RCE
Min.
Typ.
Max. Units
— 15 — nF
— 0.95 —
nF
— 0.44 —
nF
— TBD —
µs
— TBD —
µs
— TBD —
µs
— TBD — µs
— 460 — mJ
— 500 — mJ
— 0.7 — µs
— 100*3 — µC
— 200 — mJ
— 60 — nH
— 0.8 — mΩ
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case*4 Rth(j-c) Q
Per IGBT
Thermal Resistance, Junction to Case*4 Rth(j-c) D
Per FWDi
Contact Thermal Resistance, Case to Fin
Rth(c-f)
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Comparative Tracking Index
CTI
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature rise is negligible.
*4 TC measurement point is just under the chips.
Min.
Typ.
Max. Units
— 0.100 — °C/W
— 0.175 — °C/W
— 0.018 — °C/W
600 —
19 — — mm
54 — — mm
11/14 Rev. 2
Information presented is based upon manufacturers testing and projected capabilities.This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3



No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID6508001
Dual IGBT HVIGBT Module
85 Amperes/6500 Volts
Preliminary
OUTPUT CHARACTERISTICS
(TYPICAL)
150
Tj = 125°C
125
VGE = 15V 13
100 11
75 10
50
25
0
0 24 68
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
150
125
VGE = 15V
Tj = 25°C
Tj = 125°C
100
75
50
25
0
0
246
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS))
8
150
125
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = VGE
Tj = 25°C
Tj = 125°C
100
75
50
25
0
0
150
125
4 8 12
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
16
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
TYPICAL)
Tj = 25°C
Tj = 125°C
100
75
50
25
0
0 12345
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities.This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 11/14 Rev. 2




QID6508001 datasheet pdf
Download PDF
QID6508001 pdf
View PDF for Mobile


Similiar Datasheets : QID6508001

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact