QID4515002 Datasheet PDF - Powerex


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QID4515002
Powerex

Part Number QID4515002
Description HVIGBT Module
Page 5 Pages

QID4515002 datasheet pdf
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID4515002
Dual IGBTMOD™
HVIGBT Module
150 Amperes/4500 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
41
5
6
2
8
73
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A
5.51 140.0
B
2.87
73.0
C
1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01 57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Dimensions Inches Millimeters
L 0.69±0.01 17.5±0.25
M
0.38
9.75
N
0.20
5.0
P
0.22
5.5
Q
1.44
36.5
R
0.16
4.0
S
M6 Metric
M6
T
0.63 Min. 16.0 Min.
U
0.11 x 0.02 2.8 x 0.5
V
0.28 Dia.
7.0 Dia.
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low VCE(sat)
Creepage and Clearance
meet IEC 60077-1
High Isolation Voltage
Rugged SWSOA and RRSOA
Compact Industry Standard
Package
Applications:
Traction
Medium Voltage Drives
High Voltage Power Supplies
09/12 Rev. 9
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515002
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +125°C)
Collector-Emitter Voltage (VGE = 0V, Tj = -50°C)
Gate-Emitter Voltage (VCE = 0V)
Collector Current, DC (TC = 82°C)
Peak Collector Current (Pulse)
Diode Forward Current**
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C)
Symbol QID4515002 Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
VCES 4500 Volts
VCES 4400 Volts
VGES ±20 Volts
IC 150 Amperes
ICM 300* Amperes
IF 150 Amperes
IFM 300* Amperes
I2t 10 kA2sec
PC 1500 Watts
— 44 in-lb
— 44 in-lb
— 900 Grams
Viso 9.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V
Gate Leakage Current
IGES VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th) IC = 13.3mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C
IC = 150A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG VCC = 2800V, IC = 150A, VGE = 15V
Emitter-Collector Voltage**
VEC IE = 150A, VGE = 0V, Tj = 25°C
IE = 150A, VGE = 0V, Tj = 125°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics od rhw anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
5.8
Typ.
6.3
3.8
4.6
1.5
2.8
3.2
Max.
1.8
0.5
6.8
5.5
3.8
Units
mA
µA
Volts
Volts
Volts
µC
Volts
Volts
2 09/12 Rev. 9



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515002
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes VGE = 0V, VCE = 10V, f = 100kHz
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on) VCC = 2800V, IC = 133A,
Load
Rise Time
tr VGE = ±15V, RG(on) = 24.3Ω,
Switching
Turn-off Delay Time
td(off) RG(off) = 90Ω, LS = 150nH
Times
Fall Time
tf
Inductive Load
Turn-on Switching Energy
Eon Tj = 125°C, IC = 133A, VGE = ±15V,
Turn-off Switching Energy
Eoff RG(on) = 24.3Ω, RG(off) = 90Ω,
VCC = 2800V, LS = 150nH , Inductive Load
Diode Reverse Recovery Time**
trr VCC = 2800V, IE = 133A,
Diode Reverse Recovery Charge**
Qrr VGE = ±15V, RG(on) = 24.3Ω,
Diode Reverse Recovery Energy
Erec LS = 150nH, Inductive Load
Stray Inductance (C1-E2)
LSCE
Lead Resistance Terminal-Chip
RCE
Min.
Typ.
Max. Units
— 19 — nF
— 1.22 —
nF
— 0.55 — nF
— 1.00 —
µs
— 0.30 —
µs
— 3.6 — µs
— 0.36 — µs
— 0.55 —
J/P
— 0.34 —
J/P
— 0.7 — µs
— 111* —
µC
— 172 — mJ/P
— 60 — nH
— 0.8 — mΩ
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case*** Rth(j-c) Q
Per IGBT
Thermal Resistance, Junction to Case*** Rth(j-c) D
Per FWDi
Contact Thermal Resistance, Case to Fin
Rth(c-f)
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Comparative Tracking Index
CTI
Clearance Distance in Air (Terminal to Base)
Creepage Distance Along Surface
(Terminal to Base)
da(t-b)
ds(t-b)
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Min.
Typ.
Max. Units
— — 0.083 °K/W
— — 0.157 °K/W
— 0.018 — °K/W
600 —
35.0 — — mm
64 — — mm
19 — — mm
54 — — mm
09/12 Rev. 9
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515002
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
275
Tj = 25°C
15
13
220 VGE = 16V
11
165
10
110
55
0
0 2 4 68
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
275
220
165
110
55
Tj = 25°C
Tj = 125°C
0
01 234 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
1.76
1.54
1.32
1.10
0.88
0.66
0.44
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 2800V
VGE = ±15V
RG(on) = 24.3
RG(off) = 90
Ls = 150nH
Tj = 125°C
Inductive Load
Eon
Eoff
Erec
0.22
0
0 55 110 165 220 275
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
275
220
VGE = 15V
Tj = 25°C
Tj = 125°C
165
110
55
0
0
111.0
246
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
CAPACITANCE VS.
(TYPICAL)
VCE
8
11.1
Cies
1.11
Coes
VGE = 0V
Tj = 25°C
f = 100 kHz
0.11
10-1
100
Cres
101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1.32
1.10
0.88
0.66
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 2800V
VGE = ±15V
IC = 133A
Ls = 150nH
Tj = 125°C
Inductive Load
Eon
Erec
0.44
0.22
0
0 9 18 27 36 45
GATE RESISTANCE, RG, ()
TRANSFER CHARACTERISTICS
(TYPICAL)
275
VCE = VGE
220
Tj = 25°C
Tj = 150°C
165
110
55
0
0 4 8 12 16
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
VCE = 2800V
15 IC = 133A
Tj = 25°C
10
5
0
-5
-10
-15
0
0.55 1.10 1.65
GATE CHARGE, QG, (μC)
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1.32
1.10
0.88
0.66
VCC = 2800V
VGE = ±15V
IC = 133A
Ls = 150nH
Tj = 125°C
Inductive Load
Eoff
2.20
0.44
0.22
0
0 45 90 135 180
GATE RESISTANCE, RG, ()
4 09/12 Rev. 9




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