QID4515001 Datasheet PDF - Powerex


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QID4515001
Powerex

Part Number QID4515001
Description HVIGBT Module
Page 4 Pages

QID4515001 datasheet pdf
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID4515001
Dual IGBTMOD™
HVIGBT Module
150 Amperes/4500 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
41
5
6
2
8
73
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A
5.51 140.0
B
2.87
73.0
C
1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01 57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Dimensions Inches Millimeters
L 0.69±0.01 17.5±0.25
M
0.38
9.75
N
0.20
5.0
P
0.22
5.5
Q
1.44
36.5
R
0.16
4.0
S
M6 Metric
M6
T
0.63 Min. 16.0 Min.
U
0.11 x 0.02 2.8 x 0.5
V
0.28 Dia.
7.0 Dia.
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low VCE(sat)
Creepage and Clearance
meet IEC 60077-1
High Isolation Voltage
Rugged SWSOA and RRSOA
Compact Industry Standard
Package
Applications:
Traction
Medium Voltage Drives
High Voltage Power Supplies
09/12 Rev. 8
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515001
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current, DC (TC = 91°C)
Peak Collector Current (Pulse)
Diode Forward Current**
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C)
Symbol QID4515001 Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
VCES 4500 Volts
VGES ±20 Volts
IC 150 Amperes
ICM 300* Amperes
IF 150 Amperes
IFM 300* Amperes
I2t 10 kA2sec
PC 1440 Watts
— 44 in-lb
— 44 in-lb
— 900 Grams
Viso 9.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V
Gate Leakage Current
IGES VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th) IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C
IC = 150A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG VCC = 2250V, IC = 150A, VGE = 15V
Emitter-Collector Voltage**
VEC IE = 150A, VGE = 0V
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min.
4.5
Typ.
6.0
3.5
4.0
1.4
4.7
Max.
2.7
0.5
7.5
3.9***
5.6
Units
mA
µA
Volts
Volts
Volts
µC
Volts
2 09/12 Rev. 8



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515001
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on) VCC = 2250V, IC = 150A,
Load
Rise Time
tr VGE = ±15V,
Switching
Turn-off Delay Time
td(off) RG = 60Ω, LS = 180nH
Times
Fall Time
tf
Inductive Load
Turn-on Switching Energy
Eon Tj = 125°C, IC = 150A, VGE = ±15V,
Turn-off Switching Energy
Eoff RG = 60Ω, VCC = 2250V,
LS = 180nH , Inductive Load
Diode Reverse Recovery Time**
trr VCC = 2250V, IE = 150A,
Diode Reverse Recovery Charge**
Qrr VGE = ±15V, RG(on) = 60Ω,
Diode Reverse Recovery Energy
Erec LS = 180nH , Inductive Load
Stray Inductance (C1-E2)
LSCE
Lead Resistance Terminal-Chip
RCE
Min.
Typ.
Max. Units
— 18 — nF
— 1.33 —
nF
— 0.4 — nF
— — 1.5 µs
— — 0.5 µs
— — 3.5 µs
— — 1.2 µs
— 600 — mJ/P
— 450 — mJ/P
— — 1.8 µs
— 81* — µC
— 55 — mJ/P
— 60 — nH
— 0.8 — mΩ
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case*** Rth(j-c) Q
Per IGBT
Thermal Resistance, Junction to Case*** Rth(j-c) D
Per FWDi
Contact Thermal Resistance, Case to Fin
Rth(c-f)
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Comparative Tracking Index
CTI
Clearance Distance in Air (Terminal to Base)
Creepage Distance Along Surface
(Terminal to Base)
da(t-b)
ds(t-b)
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Min.
Typ.
Max. Units
— — 0.087 °C/W
— — 0.174 °C/W
— 0.018 — °C/W
600 —
35.0 — — mm
64 — — mm
19 — — mm
54 — — mm
09/12 Rev. 8
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515001
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
5
VGE
= 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0 50 100 150 200
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
1.2
Single Pulse
1.0
TC = 25°C
Per Unit Base = Rth(j-c) = 0.174 K/W
250
0.8
0.6
0.4
0.2
0
10-3
10-2
10-1
TIME, (s)
100
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
75.0
62.5
50.0
37.5
25.0
12.5
0
0
VCC = 2250V
VGE = ±15V
RG = 60Ω
LS = 180nH
Tj = 25°C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
50 100 150
EMITTER CURRENT, IE, (AMPERES)
200
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
Tj = 25°C
5 Tj = 125°C
4
3
2
1
0
0 50 100 150 200 250
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
1250
1000
750
VCC = 2250V
VGE = ±15V
RG = 60Ω
LS = 180nH
Tj = 125°C
Inductive Load Integrated
Over Range of 10%
500
250
0
0
350
50 100 150
COLLECTOR CURRENT, IC, (AMPERES)
200
TURN-OFF SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
300
250
200
150
100
VCC ≤ 3000V
VGE = ±15V
RG ≥ 60Ω
50 LS = 100nH
Tj = 125°C
0
0 1000 2000 3000 4000 5000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
1.2
Single Pulse
1.0
TC = 25°C
Per Unit Base = Rth(j-c) = 0.087 K/W
0.8
0.6
0.4
0.2
0
10-3
10-2
10-1
TIME, (s)
100
HALF-BRIDGE TURN-OFF SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
750
VCC = 2250V
625
VGE = ±15V
RG = 60Ω
LS = 180nH
500
Tj = 125°C
Inductive Load Integrated
Over Range of 10%
375
250
125
0
0
350
300
250
50 100 150
COLLECTOR CURRENT, IC, (AMPERES)
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
200
VCC ≤ 3000V
di/dt ≤ 500A/μs
Tj = 125°C
200
150
100
50
0
0 1000 2000 3000 4000 5000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
4 09/12 Rev. 8




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