QID3350001 Datasheet PDF - Powerex


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QID3350001
Powerex

Part Number QID3350001
Description Dual IGBT HVIGBT Module
Page 6 Pages

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3350001 Preliminary
Dual IGBT
HVIGBT Module
500 Amperes/3300 Volts
A
C
Q
DD
F
(4 PLACES)
E
E1 G C2
J HB
T
U
V
C1
E1 E2 (C1)
E2
C2
G1 G2
RL
S (5 PLACES)
M
G
NW
PX
E1 C2
E1 C2
G1
G2
E2
C1 E2
K
(4 PLACES)
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.11 130.0
B 5.51 140.0
C 4.49 114.0
D 2.24
57.0
E 2.42
61.5
F M8 M8 Metric
G 0.71
18.0
H 4.88 124.0
J 1.57
40.0
K 0.27
7.0 Dia.
L M4 M4 Metric
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.51
1.57
1.71
1.49
0.20
1.10
1.72
1.86
2.39
0.65
1.85
Millimeters
13.0
39.9
43.4
38.0
5.0
28.0
43.8
47.2
60.6
16.5
47.0
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-55 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
AlSiC Baseplate
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 7
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001
Dual IGBT HVIGBT Module
500 Amperes/3300 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol QID3350001 Units
Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +150°C)
VCES 3300 Volts
Collector-Emitter Voltage (VGE = 0V, Tj = -50°C)
VCES 3200 Volts
Junction Temperature
Tj -50 to 150 °C
Operating Junction Temperature
Tjop
-50 to 150
°C
Storage Temperature
Tstg
-55 to 150
°C
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (TC = 92°C)
IC 500 Amperes
Peak Collector Current (Pulse)
ICM 1000*1 Amperes
Diode Forward Current*2 IF 500 Amperes
Diode Forward Surge Current (Pulse)*2 IFM 1000*1 Amperes
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤1 50°C)
PC 4500 Watts
Mounting Torque, M4/M8 Terminal Screws
2/15
N·m
Mounting Torque, M6 Mounting Screws
— 6 N·m
Module Weight (Typical)
— 900 Grams
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 3500 Vrms, V2 = 2600 Vrms, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2600V, VCE ≤ VCES, VGE = +15V/-8V, Tj = 150°C)
Viso 6 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V, Tj = 25°C
VCE = VCES, VGE = 0V, Tj = 125°C
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 500A, VGE = 15V, Tj = 25°C
IC = 500A, VGE = 15V, Tj = 125°C
IC = 500A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 500A, VGE = 15V
Emitter-Collector Voltage*2
VEC
IE = 500A, VGE = 0V, Tj = 25°C
IE = 500A, VGE = 0V, Tj = 125°C
IE = 500A, VGE = 0V, Tj = 150°C
*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 2.0 mA
— 10
20 mA
— — 0.5 µA
5.7 6.2
6.7 Volts
2.7*3
2.85
Volts
— 3.1 3.60 Volts
— 3.6
— Volts
— 4.4 — µC
— 2.4 3.0 Volts
— 2.5 3.2 Volts
— 2.4 — Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 7



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001
Dual IGBT HVIGBT Module
500 Amperes/3300 Volts
Preliminary
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Diode Reverse Recovery Time*2
Diode Reverse Recovery Charge*2
Diode Reverse Recovery Energy
Stray Inductance
Lead Resistance Terminal-Chip
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon (10%)
Eoff (10%)
trr
Qrr
Erec (10%)
LSCE
RCE
VGE = 0V, VCE = 10V
VCC = 1800V, IC = 500A,
VGE = ±15V,
RG(on) = 5.8Ω, RG(off) = 20Ω,
LS = 100nH, Inductive Load
Tj = 125°C, IC = 500A, VGE = ±15V,
RG(on) = 5.8Ω, RG(off) = 20Ω,
VCC = 1800V, LS = 100nH, Inductive Load
VCC = 1800V, IE = 500A,
VGE = ±15V, RG(on) = 5.8Ω,
LS = 100nH, Inductive Load, Tj = 125°C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case*4
Rth(j-c) Q
Per IGBT
Thermal Resistance, Junction to Case*4
Rth(j-c) D
Per FWDi
Contact Thermal Resistance, Case to Fin
Rth(c-f)
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 TC measurement point is just under the chips.
Min. Typ.
— 58
— 3.6
— 1.6
— 1.1
— 0.31
— 3.0
— 0.33
— 760
— 680
Max.
Units
nF
nF
nF
µs
µs
µs
µs
mJ/P
mJ/P
— 700
ns
— 470*1
µC
— 485
— mJ/P
— 25 — nH
— TBD —
mΩ
Min. Typ. Max. Units
— — 0.0275 °C/W
— — 0.052 °C/W
— 0.008 — °C/W
11/14 Rev. 7
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001
Dual IGBT HVIGBT Module
500 Amperes/3300 Volts
Preliminary
OUTPUT CHARACTERISTICS
(TYPICAL)
750
Tj = 150°C
VGE = 19V
13
625
15
500 11
375
250
9
125
0
0 123 4 56
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
750
VCE = VGE
625 Tj = 25°C
Tj = 150°C
500
375
250
125
0
0 2 4 6 8 10 12
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
750
625
VGE = 15V
Tj = 25°C
Tj = 150°C
500
375
250
125
0
0
750
1 234
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
625
500
375
250
125 Tj = 25°C
Tj = 150°C
0
01 234 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 11/14 Rev. 7




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