QID3320004 Datasheet PDF - Powerex


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QID3320004
Powerex

Part Number QID3320004
Description Dual IGBT HVIGBT Module
Page 6 Pages

QID3320004 datasheet pdf
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3320004
Dual IGBT
HVIGBT Module
200 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
M
1
G (3TYP)
T
(SCREWING
DEPTH - 3 TYP)
23
H
H
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
42
8
7
1
5
63
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.51 140.0
B 2.87
73.0
C 1.50
38.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01
57.0±0.25
F 1.18
30.0
G 0.43
11.0
H 1.07
27.15
J 0.20
5.0
K 1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.04
0.16
M5 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
26.5
4.0
M5
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
UL Recognized (E78240)
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 6
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Operating Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (TC = 102°C)
Collector Current (TC = 25°C)
Peak Collector Current (Pulse)
Diode Forward Current** (TC = 99°C)
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M5 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 3500 VRMS, V2 = 2600 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C)
Symbol QID3320004 Units
Tj -50 to +150 °C
Top -50 to +150 °C
Tstg
-55 to +150
°C
VCES 3300 Volts
VGES ±20 Volts
IC 200 Amperes
IC 370 Amperes
ICM 400* Amperes
IF 200 Amperes
IFM 400* Amperes
I2t 15 kA2sec
PC 2080 Watts
— 35 in-lb
— 44 in-lb
— 800 Grams
Viso 6.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
IC = 200A, VGE = 15V, Tj = 125°C
IC = 200A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 170A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V, Tj = 25°C
IE = 200A, VGE = 0V, Tj = 125°C
IE = 200A, VGE = 0V, Tj = 150°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 2.0 mA
— — 0.5 µA
5.5 6.0
6.5 Volts
2.7***
3.0
Volts
— 3.4 4.0 Volts
— 3.6
— Volts
— 1.8 — µC
— 2.3 3.0 Volts
— 2.45 — Volts
— 2.55 — Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 6



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Energy
Stray Inductance (C1-E2)
Lead Resistance Terminal-Chip
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
trr
Qrr
Erec
LSCE
RCE
VGE = 0V, VCE = 10V
VCC = 1800V, IC = 200A,
VGE = ±15V,
RG(on) = 15Ω, RG(off) = 50Ω,
LS = 100nH, Inductive Load
Tj = 150°C, IC = 200A, VGE = ±15V,
RG(on) = 15Ω, RG(off) = 50Ω,
VCC = 1800V, LS = 100nH, Inductive Load
VCC = 1800V, IE = 200A,
VGE = ±15V, RG(on) = 15Ω,
LS = 100nH, Inductive Load, Tj = 150°C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case***
Thermal Resistance, Junction to Case***
Contact Thermal Resistance, Case to Fin
Comparative Tracking Index
Rth(j-c) Q
Rth(j-c) D
Rth(c-f)
CTI
Per IGBT
Per FWDi
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Clearance Distance in Air (Terminal to Base)
Creepage Distance Along Surface
(Terminal to Base)
da(t-b)
ds(t-b)
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Min. Typ.
— 23
— 1.5
— 0.7
— 800
— 160
— 3200
— 1300
— 495
— 360
Max.
Units
nF
nF
nF
ns
ns
ns
ns
mJ/P
mJ/P
— 500
ns
— 180*
µC
— 265
— mJ/P
— 60 — nH
— 0.8 — mΩ
Min. Typ.
— 0.060
— 0.096
— 0.018
Max.
Units
°C/W
°C/W
°C/W
600 —
35.0 —
64 —
— mm
— mm
19 —
— mm
54 — — mm
11/14 Rev. 6
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj = 150°C
VGE = 19V
13
250
15
200 11
150
100
9
50
0
0 123 4 56
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
VCE = VGE
250 Tj = 25°C
Tj = 150°C
200
150
100
50
0
0 2 4 6 8 10 12
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
300
250
VGE = 15V
Tj = 25°C
Tj = 150°C
200
150
100
50
0
0
300
1 234
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
250
200
150
100
50 Tj = 25°C
Tj = 150°C
0
01 234 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 11/14 Rev. 6




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