QID3320002 Datasheet PDF - Powerex


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QID3320002
Powerex

Part Number QID3320002
Description Dual IGBT HVIGBT Module
Page 6 Pages

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3320002
Dual IGBT
HVIGBT Module
200 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
41
5
6
2
8
73
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.51 140.0
B 2.87
73.0
C 1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01
57.0±0.25
F 1.18
30.0
G 0.43
11.0
H 1.07
27.15
J 0.20
5.0
K 1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.44
0.16
M6 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
36.5
4.0
M6
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Advanced Mitsubishi R-Series
Chip Technology
Low VCE(sat)
Creepage and Clearance
meet IEC 60077-1
High Isolation Voltage
Rugged SWSOA and RRSOA
Compact Industry Standard
Package
Applications:
Medium Voltage Drives
High Voltage Power Supplies
01/13 Rev. 8
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (TC = 102°C)
Collector Current (TC = 25°C)
Peak Collector Current (Pulse)
Diode Forward Current** (TC = 99°C)
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C)
Symbol QID3320002 Units
Tj -40 to 150 °C
Tstg
-40 to 125
°C
VCES 3300 Volts
VGES ±20 Volts
IC 200 Amperes
IC 370 Amperes
ICM 400* Amperes
IF 200 Amperes
IFM 400* Amperes
I2t 15 kA2sec
PC 1780 Watts
— 44 in-lb
— 44 in-lb
— 900 Grams
Viso 7.7 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
IC = 200A, VGE = 15V, Tj = 125°C
IC = 200A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 170A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V, Tj = 25°C
IE = 200A, VGE = 0V, Tj = 125°C
IE = 200A, VGE = 0V, Tj = 150°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 2.0 mA
— — 0.5 µA
5.5 6.0
6.5 Volts
2.7***
3.3
Volts
— 3.4 4.0 Volts
— 3.6
— Volts
— 1.8 — µC
— 2.3 3.0 Volts
— 2.45 — Volts
— 2.55 — Volts
2 01/13 Rev. 8



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
Turn-on Delay Time
td(on)
VCC = 1650V, IC = 200A,
Rise Time
tr VGE = +15V/-8V,
Turn-off Delay Time
td(off)
RG(on) = 15Ω, RG(off) = 50Ω,
Fall Time
tf LS = 125nH, Inductive Load
Turn-on Switching Energy
Eon Tj = 125°C, IC = 200A, VGE = +15V/-8V,
Turn-off Switching Energy
Eoff RG(on) = 15Ω, RG(off) = 50Ω,
VCC = 1650V, LS = 125nH, Inductive Load
Diode Reverse Recovery Time**
trr VCC = 1650V, IE = 200A,
Diode Reverse Recovery Charge**
Qrr VGE = +15V/-8V, RG(on) = 15Ω,
Diode Reverse Recovery Energy
Erec
LS = 125nH, Inductive Load, Tj = 125°C
Stray Inductance (C1-E2)
LSCE
Lead Resistance Terminal-Chip
RCE
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case***
Thermal Resistance, Junction to Case***
Contact Thermal Resistance, Case to Fin
Comparative Tracking Index
Rth(j-c) Q
Rth(j-c) D
Rth(c-f)
CTI
Per IGBT
Per FWDi
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Clearance Distance in Air (Terminal to Base)
Creepage Distance Along Surface
(Terminal to Base)
da(t-b)
ds(t-b)
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Min. Typ.
— 23
— 1.5
— 0.7
— 800
— 160
— 3200
— 1300
— 335
— 275
Max.
Units
nF
nF
nF
ns
ns
ns
ns
mJ/P
mJ/P
— 500
ns
— 180*
µC
— 190
— mJ/P
— 60 — nH
— 0.8 — mΩ
Min. Typ.
— 0.074
— 0.11
— 0.018
Max.
Units
°C/W
°C/W
°C/W
600 —
35.0 —
64 —
— mm
— mm
19 —
— mm
54 — — mm
01/13 Rev. 8
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj = 150°C
VGE = 19V
13
250
15
200 11
150
100
9
50
0
0 123 4 56
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
VCE = VGE
250 Tj = 25°C
Tj = 150°C
200
150
100
50
0
0 2 4 6 8 10 12
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
300
250
VGE = 15V
Tj = 25°C
Tj = 150°C
200
150
100
50
0
0
300
1 234
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
250
200
150
100
50 Tj = 25°C
Tj = 150°C
0
01 234 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
4 01/13 Rev. 8




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