QID1210006 Datasheet PDF - Powerex


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QID1210006
Powerex

Part Number QID1210006
Description Split Dual Si/SiC Hybrid IGBT Module
Page 7 Pages

QID1210006 datasheet pdf
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID1210006
Split Dual Si/SiC
Hybrid IGBT Module
100 Amperes/1200 Volts
B
M
G
A
D
F
Q
Q
PQ
123
E2
456
C2
789
E1
10 11 12
C1
G2 S2
20 19 18 17
L
R
DETAIL "B"
G1 S1
16 15 14 13
ST
DETAIL "A"
HC
C1 (10 - 12)
C2 (4 - 6)
Y
AA
AB
Z
DETAIL "B"
AC
U
X
NE
W
V
KT
DETAIL "A"
G1 (15 - 16)
E1 (13 - 14)
E1 (7 - 9)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
K
L
M
N
P
Inches
4.32
2.21
0.71
3.70±0.02
2.026
3.17
1.96
1.00
0.87
0.266
0.26
0.59
0.586
Millimeters
109.8
56.1
18.0
94.0±0.5
51.46
80.5
49.8
25.5
22.0
6.75
6.5
15.0
14.89
G2 (19 - 20)
E2 (17 - 18)
E2 (1 - 3)
Dimensions
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
AC
Inches
0.449
0.885
1.047
0.15
0.16
0.30
0.045
0.03
0.16
0.47
0.17 Dia.
0.10 Dia.
0.08 Dia.
Millimeters
11.40
22.49
26.6
3.80
4.0
7.5
1.15
0.8
4.0
12.1
4.3 Dia.
2.5 Dia.
2.1 Dia.
2/7/14 Rev. 3
Description:
Powerex IGBT Modules are
designed for use in high frequency
applications; upwards of 30 kHz
for hard switching applications
and 80 kHz for soft switching
applications. Each module consists
of two IGBT Transistors with each
transistor having a reverse-
connected super-fast recovery
free-wheel silicon carbide Schottky
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low ESW(off)
£ Aluminum Nitride Isolation
£ Discrete Super-Fast
Recovery Free-Wheel Silicon
Carbide Schottky Diode
£ Low Internal Inductance
£ 2 Individual Switches
per Module
£ Isolated Baseplate for Easy
Heat Sinking
£ AlSiC Baseplate
£ RoHS Compliant
Applications:
£ Energy Saving Power
Systems such as:
Fans; Pumps; Consumer
Appliances
£ High Frequency Type Power
Systems such as:
UPS; High Speed Motor Drives;
Induction Heating; Welder;
Robotics
£ High Temperature Power
Systems such as:
Power Electronics in Electric
Vehicle and Aviation Systems
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210006
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Repetitive Peak Emitter Current (TC = 25°C, tp = 10ms, Half Sine Pulse)**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol QID1210006 Units
Tj
–40 to 150
°C
Tstg
–40 to 150
°C
VCES 1200 Volts
VGES ±20 Volts
IC 100* Amperes
ICM 200* Amperes
IE 80* Amperes
IEM 455* Amperes
PC 570 Watts
— 40 in-lb
— 130 Grams
VISO 2500 Volts
IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
— —
1.0 mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
— —
0.5 µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
4.5 6.0
7.5 Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts
IC = 100A, VGE = 15V, Tj = 125°C
— 5.0
— Volts
Total Gate Charge
QG VCC = 600V, IC = 100A, VGE = 15V — 450 — nC
Input Capacitance
Cies
— —
16 nf
Output Capacitance
Coes
VCE = 10V, VGE = 0V
— —
1.3 nf
Reverse Transfer Capacitance
Cres
— — 0.3 nf
Inductive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 100A,
— — TBD ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
TBD
ns
Switch
Turn-off Delay Time
td(off)
RG = 3.1Ω,
— — TBD ns
TimeFall Time
tf
Inductive Load Switching Operation
TBD
ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi).
2 2/7/14 Rev. 3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210006
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Diode Forward Voltage
Diode Reverse Current
Diode Capacitive Charge
VFM
IR
QC
IF = 80A, VGS = -5V
IF = 80A, VGS = -5V, Tj = 175°C
VR = 1200V
VR = 1200, Tj = 150°C
VR = 1200V, IF = 80A, di/dt = 800A/μs
Min.
Typ.
1.6
2.5
140
260
520
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module,
TC Reference Point Under Chips
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
TC Reference Point Under Chips
Contact Thermal Resistance
Rth(c-f)
Per 1/2 Module, Thermal Grease Applied
External Gate Resistance
RG
Internal Inductance
Lint IGBT Part
Min. Typ.
— —
— —
— 0.04
3.1 —
— 10
Max.
2.0
3.2
800
1600
Units
Volts
Volts
μA
μA
nC
Max.
0.217
Units
°C/W
0.368 °C/W
— °C/W
31 Ω
— nH
2/7/14 Rev. 3
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210006
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25°C
VGE = 20V
15
14
13
150 12
100 11
10
50
9
8
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
8
VGE = 15V
Tj = 25°C
7 Tj = 125°C
6
5
4
3
2
1
0
0 50 100 150 200
COLLECTOR-CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
VGE = 10V
Tj = 25°C
150 Tj = 125°C
100
50
0
0 5 10 15 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8 IC = 200A
6
IC = 100A
4 IC = 40A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
4 2/7/14 Rev. 3




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