QID0660023 Datasheet PDF - Powerex


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QID0660023
Powerex

Part Number QID0660023
Description Dual IGBT Module
Page 3 Pages

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID0660023 Preliminary
Dual IGBT Module
600 Amperes/600 Volts
B EF
G
A
D
H - (3 PLACES)
C2E1
E2
C1
Q - (5 PLACES)
G
J
K
M
K
M
M
L - (4 PLACES)
N
C LABEL
P
E2
18V
G2
C2E1
E2
C1
C1
G1
18V
E1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.00
101.6
B
2.50
63.5
C
1.00±0.015 25.4±0.4
D
3.39
86.1
E
1.89
48.0
F
0.435
11.0
G
0.165
4.2
H
#10-32 X 0.31 Min.
Dimensions
J
K
L
M
N
P
Q
Inches
Millimeters
0.87
22.1
0.98
24.9
0.22 Dia.
5.6 Dia.
0.53
13.5
0.09 Min.
2.3 Min.
0.27
6.9
#2-56 X 0.17 Min.
Description:
Powerex Dual IGBT power
module is configured as a
half-bridge inverter. The Aluminum
Silicon Carbide (AlSiC) baseplate
offers light weight module design.
The power module is designed
to operate reliably in harsh
aerospace, military and other
environments. The module is rated
to operate over full temperature
range of -55°C to 125°C.
Powerex is using High Accelerated
Stress Test (HAST) to assure long
term reliability of plastic power
modules.
Features:
Class H Hybrid Screened to
MIL-PRF-38534 Requirements
Withstand HAST
Light Weight AlSiC Baseplate
Low Drive Requirement
Ultra-fast Free Wheeling Diode
Internal Zener Protection
on Gates
High Side Collector Sense Pin
for De-sat Detection
High Power Density
Aluminum Nitride DBC Ceramic
Applications:
Aerospace
Military
Motor Control
04/10 Rev. 1
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0660023
Dual IGBT Module
600 Amperes/600 Volts
Preliminary
Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current (1msec)
Diode Forward Current
Diode Forward Surge Current (1msec)
Junction Temperature
Storage Temperature
Mounting Torque, Terminal Screws
Mounting Torque, Control Screws
Mounting Torque, Mounting Screws
Module Weight (Typical)
V Isolation
Symbol
VCES
VGES
IC
ICM
IF
IFM
Tj
Tstg
VRMS
QID0660023
600
±20
600
1200*
600
1200*
150
-55 to 125
26
4
26
270
2500
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
°C
°C
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V
IC = 300A, VGE = 15V
IC = 600A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG VCC = 300V, IC = 600A, VGS = 15V
Diode Forward Voltage
VFM
IE = 600A, VGS = 0V
IE = 600A, VGS = 0V, Tj = 125°C
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
5.0
Typ.
6.0
1.7
1.7
2400
1.8
Max.
1.0
10.0
7.5
2.2
2.0
2.5
2.2
Units
mA
µA
Volts
Volts
Volts
Volts
nC
Volts
Volts
2 04/10 Rev. 1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0660023
Dual IGBT Module
600 Amperes/600 Volts
Preliminary
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
Turn-on Delay Time
td(on)
Rise Time
tr VCC = 300V, IC = 600A,
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V,
Fall Time
tf RG = 4.2Ω, IE = 600A,
Diode Reverse Recovery Time
trr
Inductive Load
Diode Reverse Recovery Charge
Qrr
Turn-on Energy
Eon
VCC = 350V, IC = 300A, RG = 5.0Ω,
VGE = +15V/-7V, Tj = 125°C
Turn-off Energy
Eoff
VCC = 350V, IC = 300A, RG = 10Ω,
VGE = +15V/-7V, Tj = 125°C
Reverse Recovery Energy
Erec
VCC = 350V, IC = 300A
VGE = -7V, di/dt = -2000A/µS
Min.
Typ.
8.7
Max.
90
11.0
3.6
500
300
750
300
250
18.0
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
mJ
40.0
mJ
— 8.0 mJ
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance, Case to Fin
**TC measurement point is just under the chip.
Rth(j-c)
Rth(j-c)
Rth(c-f)
Per IGBT, Half Module, Tj = 125°C
Per FWDi, Half Module, Tj = 125°C
Per Module,Thermal Grease Applied
Min.
Typ.
0.063
0.100
0.020
Max.
0.075
0.120
Units
°C/W
°C/W
°C/W
04/10 Rev. 1
3




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