QID0640020 Datasheet PDF - Powerex


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QID0640020
Powerex

Part Number QID0640020
Description IGBT Module
Page 5 Pages

QID0640020 datasheet pdf
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID0640020
Dual IGBTMOD™
NX-Series Module
400 Amperes/600 Volts
A
D
E
JF
G
H
Q
ST U
R
ST
QU
W
VX
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47 24
48 23
DETAIL "B"
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
M LK
N
DETAIL "A"
KP L
AK
JY
(4 PLACES)
AD
AE
AF
AA B
Z AB
AG
AC (4 PLACES)
AJ
AH
AL
AMC
AT
AU
AW
AX
E1C2(24) E1C2(23)
AV
Tr2
G2(38)
E2(39)
Di2 Di1 Tr1
C1(22)
E1(16)
G1(15)
DETAIL "B"
E2 C1
(47) (48)
Th
NTC
TH1 TH2
(1) (2)
AP
AR
AS
AN AQ
DETAIL "A"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
5.98
2.44
0.67
5.39
4.79
4.33±0.02
3.89
3.72
0.53
0.15
0.28
0.30
1.95
0.9
0.55
0.87
0.67
0.48
0.24
0.16
0.37
0.83
M6
Millimeters
152.0
62.0
17.0
137.0
121.7
110.0±0.5
99.0
94.5
13.5
3.8
7.25
7.75
49.54
22.86
14.0
22.0
17.0
12.0
6.0
4.2
6.5
21.14
M6
Dimensions
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53 39.0
1.97±0.02 50.0±0.5
2.26 57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.02 17.0+1.0/-0.5
0.51 13.0
0.27 7.0
0.03 0.8
0.81 20.5
0.12 3.0
0.14 3.5
0.21 5.4
0.49 12.5
0.15 3.81
0.05 1.15
0.025
0.65
0.29 7.4
0.24 6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06 1.5
0.49 12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ AlSiC Baseplate
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
04/10 Rev. 0
1



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0640020
Dual IGBTMOD™ NX-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Module Weight (Typical)
Baseplate Flatness, On Centerline X, Y (See Below)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
Tj
Tstg
VISO
QID0640020
-40 to 150
-55 to 130
31
40
220
±0 ~ +100
2500
Inverter Sector
Collector-Emitter Voltage (G-E Short)
VCES
600
Gate-Emitter Voltage (C-E Short)
VGES
±20
Collector Current (TC = 60°C)*1
IC 400
Peak Collector Current (Pulse)*3
ICM
800
Emitter Current (TC = 25°C)*1*4
IE*2
400
Peak Emitter Current (Pulse)*3
IEM*2
800
Maximum Collector Dissipation (TC = 25°C)*1*4
PC 1115
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond Tj(max) rating.
Units
°C
°C
in-lb
in-lb
Grams
µm
Volts
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
BASEPLATE FLATNESS
MEASUREMENT POINT
Y
X
– : CONCAVE
+ : CONVEX
HEATSINK SIDE
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
IGBT FWDi NTC Thermistor
0
21.5
32.0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
Th
24
48 23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
21.5
30.0
43.6
Dimensions in mm (Tolerance: ±1mm)
2 04/10 Rev. 0



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0640020
Dual IGBTMOD™ NX-Series Module
400 Amperes/600 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
ICES
VGE(th)
IGES
VCE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Turn-on Rise Time
Switch
Turn-off Delay Time
Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr*2
Qrr*2
VCE = VCES, VGE = 0V
IC = 40mA, VCE = 10V
VGE = VGES, VCE = 0V
IC = 400A, VGE = 15V, Tj = 25°C*5
IC = 400A, VGE = 15V, Tj = 125°C*5
IC = 400A, VGE = 15V, Chip
VCE = 10V, VGE = 0V
VCC = 300V, IC = 400A, VGE = 15V
VCC = 300V, IC = 400A,
VGE = ±15V,
RG = 3.6Ω, IE = 400A,
Inductive Load Switching Operation
Emitter-Collector Voltage
VEC*2
IE = 400A, VGE = 0V *5
IE = 400A, VGE = 0V*5
Min.
5
Typ.
6
1.7
1.9
1.6
1100
11
2.0
1.9
Max.
1.0
7
0.5
2.1
50.0
5.3
1.6
200
200
400
600
200
2.8
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max.
Module Lead Resistance
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Rlead
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Main Termnals-Chip (Per Switch)
Per IGBT*1
Per FWDi*1
Case to Heatsink (Per 1 Module)
Thermal Grease Applied*1*7
— 1.1 —
— — 0.112
— — 0.192
— 0.015 —
Internal Gate Resistance
External Gate Resistance
RGint
RG
TC = 25°C
­— 0 —
1.6 — 16
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ.
Zero Power Resistance
R
TC = 25°C*1
4.85 5.00
Deviation of Resistance
R/R
TC = 100°C, R100 = 493Ω*1
–7.3 —
B Constant
B(25/50)
B = (InR1 – InR2) / (1/T1 – 1/T2)*6
— 3375
Power Dissipation
P25
TC = 25°C*1
——
**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(°C) + 273.15
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Max.
5.15
+7.8
10
Units
mA
Volts
µA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
Volts
Volts
Units
mΩ
°C/W
°C/W
°C/W
Ω
Ω
Units
kΩ
%
K
mW
04/10 Rev. 0
3



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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0640020
Dual IGBTMOD™ NX-Series Module
400 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
800
VGE =
20V
15
13
Tj = 25°C
12
600
400 11
200 10
98
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
Tj = 25°C
Tj = 125°C
102
101
01 23 4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
103
td(off)
td(on)
102 tr
tf
101
100
VCC = 300V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
101
GATE RESISTANCE, RG, ()
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
3.5
VGE = 15V
3.0 Tj = 25°C
Tj = 125°C
2.5
2.0
1.5
1.0
0.5
0
0 200 400 600 800
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE
(INVERTER PART
-VTSY. PVICCEAL)
102
VGE = 0V
Cies
101
Coes
100 Cres
10-1
10-1
100
101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
VCC = 300V
VGE = ±15V
RG = 3.6
Tj = 25°C
Inductive Load
102
101
101
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
Tj = 25°C
8
6 IC = 800A
IC = 400A
4 IC = 160A
2
0
6
104
103
8 10 12 14 16 18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
20
tf
td(off)
VCC = 300V
VGE = ±15V
RG = 3.6
Tj = 125°C
Inductive Load
102 td(on)
101
101
tr
102
COLLECTOR CURRENT, IC, (AMPERES)
103
GA(TINEVCEHRATREGREPVASR.TV)GE
20
IC = 400A
16
VCC = 200V
12 VCC = 300V
8
4
0
0 400 800 1200 1600
GATE CHARGE, QG, (nC)
4 04/10 Rev. 0




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