PUMD3 Datasheet PDF - NXP Semiconductors


www.Datasheet-PDF.com

PUMD3
NXP Semiconductors

Part Number PUMD3
Description NPN/PNP resistor-equipped transistors
Page 11 Pages

PUMD3 datasheet pdf
View PDF for PC
PUMD3 pdf
View PDF for Mobile


No Preview Available !

PEMD3; PIMD3; PUMD3 www.DataSheet4U.com
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Rev. 10 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
Table 1. Product overview
Type number
Package
NXP
PEMD3
SOT666
PIMD3
SOT457
PUMD3
SOT363
JEITA
-
SC-74
SC-88
PNP/PNP
complement
PEMB11
-
PUMB11
NPN/NPN
complement
PEMH11
-
PUMH11
1.2 Features
„ Built-in bias resistors
„ Simplifies circuit design
„ Reduces component count
„ Reduces pick and place costs
1.3 Applications
„ Low current peripheral driver
„ Control of IC inputs
„ Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 100 mA
7 10 13 kΩ
0.8 1
1.2



No Preview Available !

NXP Semiconductors
PEMD3; PIMD3; PUMD3www.DataSheet4U.com
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
Simplified outline Symbol
654
65
4
123
001aab555
R1
TR1
R2
R2
TR2
R1
1 23
006aaa143
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description
PEMD3
-
plastic surface mounted package; 6 leads
PIMD3
SC-74 plastic surface mounted package; 6 leads
PUMD3
SC-88 plastic surface mounted package; 6 leads
4. Marking
Table 5. Marking codes
Type number
PEMD3
PIMD3
PUMD3
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
D3
M7
D*3
Version
SOT666
SOT457
SOT363
PEMD3_PIMD3_PUMD3_10
Product data sheet
Rev. 10 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
2 of 11



No Preview Available !

NXP Semiconductors
PEMD3; PIMD3;w PUMD3w w . D a t a S h e e t 4 U . c
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
open emitter
open base
open collector
-
-
-
-
negative
-
input voltage TR2
positive
-
negative
-
IO output current (DC)
-
ICM peak collector current
-
Ptot
total power dissipation
Tamb 25 °C
SOT363
[1] -
SOT457
[2] -
SOT666
[1][3] -
Tstg
Tj
Tamb
Per device
storage temperature
junction temperature
ambient temperature
65
-
65
Ptot
total power dissipation
Tamb 25 °C
SOT363
[1] -
SOT457
[2] -
SOT666
[1][3] -
Max Unit
50 V
50 V
10 V
+40 V
10 V
+10 V
40 V
100 mA
100 mA
200
300
200
+150
150
+150
mW
mW
mW
°C
°C
°C
300 mW
600 mW
300 mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
PEMD3_PIMD3_PUMD3_10
Product data sheet
Rev. 10 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
3 of 11



No Preview Available !

NXP Semiconductors
PEMD3; PIMD3; PUMD3www.DataSheet4U.com
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT457
SOT666
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT457
SOT666
Min Typ Max
[1] - - 625
[2] - - 417
[1][3] - - 625
[1] - - 416
[2] - - 208
[1][3] - - 416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
- - 100 nA
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
- - 1 μA
- - 50 μA
- - 400 μA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
30 -
--
-
150 mV
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 μA
on-state input voltage VCE = 0.3 V; IC = 10 mA
bias resistor 1 (input)
- 1.1 0.8 V
2.5 1.8 -
V
7 10 13 kΩ
R2/R1 bias resistor ratio
0.8 1
1.2
Cc collector capacitance VCB = 10 V; IE = ie = 0 A; - - -
f = 1 MHz
TR1 (NPN)
- - 2.5 pF
TR2 (PNP)
- - 3 pF
PEMD3_PIMD3_PUMD3_10
Product data sheet
Rev. 10 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 11




PUMD3 datasheet pdf
Download PDF
PUMD3 pdf
View PDF for Mobile


Similiar Datasheets : PUMB11 PUMB13 PUMB14 PUMB15 PUMB16 PUMB17 PUMB18 PUMB19 PUMB2 PUMB3 PUMB30 PUMB4 PUMB9 PUMD10 PUMD12 PUMD13 PUMD14 PUMD15 PUMD15 PUMD16 PUMD17 PUMD18 PUMD19 PUMD19 PUMD2 PUMD2 PUMD24 PUMD3 PUMD3 PUMD48

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact