PNM723T703E0-2 Datasheet PDF - Prisemi

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PNM723T703E0-2
Prisemi

Part Number PNM723T703E0-2
Description N-Channel MOSFET
Page 4 Pages


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PNM723T703E0-2
N-Channel MOSFET
Description
PNM723T703E0-2 is designed for high speed switching applications
The enhancement mode MOS is extremely high density cell and low on-resistance.
D3
VDS(V)
40
MOSFET Product Summary
rDS(on)(Ω)
VGS(th)(V)
3.5@ VGS=10V
1 to 2.0
ID(A)
0.18
G1
S2
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
IDSS
IGSS
VGS(th)
RDS(ON)
ID =10μA,VGS=0V
VDS =40V,VGS=0V
VDS =0V,VGS20V
VDS =VGS, ID =250μA
VGS=5V, ID =0.05A
VGS=10V, ID =0.5A,
DYNAMIC PARAMETERS
CISS
CDSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
SWITCHING PARAMETERS
td(on)
td(off)
VDS=30V, VGS =10V,
RG=25, RL=150
ID =0.2A
Min. Typ. Max. Units
40 -
-V
- - 0.5 μA
- - ±1 μA
1-
-V
- - 4.5
- - 4.5
- - 40 pF
- - 20 pF
- - 5 pF
- - 20 ns
- - 20 ns
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Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Total Power Dissipation TA=25
PNM723T703E0-2
N-Channel MOSFET
Symbol
VDS
VGS
ID
ID
PD
Value
40
±20
0.18
0.36
150
Units
V
V
A
A
mW
Typical Characteristics
1.0
0.8 VGS=6.0V
0.6
VGS=4.5V
0.4
0.2 VGS=3.5V
1.0
0.8
0.6
0.4
0.2
T=25°C
T=55°C
T=125°C
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
VDS – Drain Source Voltage (V)
Fig 1. Output Characteristics
3.5 4.0
6
5 VGS=3.0V
4
3 VGS=7.0V
0
0.0
80
0.5 1.0 1.5 2.0 2.5
VGS – Gate to Source Voltage (V)
Fig 2. Transfer Characteristics
Ciss
60
40
3.0
2
1
0.0
0
Rev.06
VGS=11.5V
0.2 0.4 0.6 0.8 1.0
ID – Drain Current (A)
Fig 3. On-Resistance vs. Drain Current
2
20
COss
CRss
0
0
4
8 12 16 20
VDS – Drain Source Voltage (V)
Fig 4. Capacitance
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N-Channel MOSFET
Product dimension
1.2
0.32
1.2 0.8
PNM723T703E0-2
SOT-723 PACKAGE
0.5
0.2
0.4
0.8
0.13
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N-Channel MOSFET
PNM723T703E0-2
IMPORTANT NOTICE
and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi
reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Prisemi assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed to be used with ordinary electronic equipment or devices, Should you
intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
Website: http://www.prisemi.com
For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics.
All rights are reserved.
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