PNM723T703E0-2 Datasheet PDF - Prisemi

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PNM723T703E0-2
Prisemi

Part Number PNM723T703E0-2
Description N-Channel MOSFET
Page 4 Pages


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PNM723T703E0-2
N-Channel MOSFET
Description
PNM723T703E0-2 is designed for high speed switching applications
The enhancement mode MOS is extremely high density cell and low on-resistance.
D3
VDS(V)
40
MOSFET Product Summary
rDS(on)(Ω)
VGS(th)(V)
3.5@ VGS=10V
1 to 2.0
ID(A)
0.18
G1
S2
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
IDSS
IGSS
VGS(th)
RDS(ON)
ID =10μA,VGS=0V
VDS =40V,VGS=0V
VDS =0V,VGS20V
VDS =VGS, ID =250μA
VGS=5V, ID =0.05A
VGS=10V, ID =0.5A,
DYNAMIC PARAMETERS
CISS
CDSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
SWITCHING PARAMETERS
td(on)
td(off)
VDS=30V, VGS =10V,
RG=25, RL=150
ID =0.2A
Min. Typ. Max. Units
40 -
-V
- - 0.5 μA
- - ±1 μA
1-
-V
- - 4.5
- - 4.5
- - 40 pF
- - 20 pF
- - 5 pF
- - 20 ns
- - 20 ns
Rev.06
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