PIMZ2 Datasheet PDF - NXP Semiconductors


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PIMZ2
NXP Semiconductors

Part Number PIMZ2
Description NPN/PNP general-purpose double transistors
Page 9 Pages

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PIMZ2; PUMZ2
www.DataSheet4U.com
NPN/PNP general-purpose double transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose double transistors.
Table 1. Product overview
Type number
Package
NXP
PIMZ2
SOT457
PUMZ2
SOT363
JEITA
SC-74
SC-88
1.2 Features
„ Simplified circuit design
„ Reduced component count
„ Reduced pick and place costs
1.3 Applications
„ General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
VCEO
IC
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
Conditions
open base
Configuration
NPN/PNP double transistors
NPN/PNP double transistors
Min Typ Max Unit
- - 50 V
- - 150 mA



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NPN/PNP general-purpose double transistors
2. Pinning information
Table 3. Pinning
Pin Description
PIMZ2 (SOT457)
1 collector TR2
2 emitter TR2
3 collector TR1
4 emitter TR1
5 base TR1
6 base TR2
PUMZ2 (SOT363)
1 emitter TR1
2 base TR1
3 base TR2
4 collector TR2
5 emitter TR2
6 collector TR1
Simplified outline Symbol
654
123
654
TR1
TR2
123
sym082
654
123
654
TR2
TR1
123
sym083
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
PIMZ2
SC-74
plastic surface mounted package; 6 leads
PUMZ2
SC-88
plastic surface mounted package; 6 leads
4. Marking
Table 5. Marking codes
Type number
PIMZ2
PUMZ2
[1] * = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
M6
GZ*
Version
SOT457
SOT363
PIMZ2_PUMZ2_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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NPN/PNP general-purpose double transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
SOT457
open emitter
open base
open collector
Tamb 25 °C
-
-
-
-
-
-
[1] -
SOT363
[1] -
Tstg
Tj
Tamb
Per device
storage temperature
junction temperature
ambient temperature
65
-
65
Ptot
total power dissipation
Tamb 25 °C
SOT457
[1] -
SOT363
[1] -
[1] Device mounted on an FR4 printed-circuit board.
6. Thermal characteristics
Max
60
50
7
150
200
100
200
180
+150
150
+150
300
300
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
mW
mW
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT457
SOT363
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT457
SOT363
Conditions
Tamb 25 °C
Tamb 25 °C
[1] Device mounted on an FR4 printed-circuit board.
Min Typ Max Unit
[1] - - 625 K/W
[1] - - 694 K/W
[1] - - 417 K/W
[1] - - 417 K/W
PIMZ2_PUMZ2_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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PIMZ2; PUMZ2www.DataSheet4U.com
NPN/PNP general-purpose double transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity; unless otherwise specified
ICBO
collector-base cut-off current VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A; Tj = 150 °C
IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A
hFE DC current gain
VCE = 6 V; IC = 1 mA
TR1 (PNP)
-
-
-
120
VCEsat collector-emitter saturation IC = 50 mA; IB = 5 mA
voltage
-
fT transition frequency
Cc collector capacitance
TR2 (NPN)
IE = 2 mA; VCE = 12 V; f = 100 MHz
IE = ie = 0 A; VCB = 12 V; f = 1 MHz
-
-
VCEsat collector-emitter saturation IC = 50 mA; IB = 5 mA
voltage
-
fT transition frequency
Cc collector capacitance
IE = 2 mA; VCE = 12 V; f = 100 MHz
IE = ie = 0 A; VCB = 12 V; f = 1 MHz
100
-
Typ
-
-
-
250
-
190
2.3
-
-
-
Max Unit
100 nA
50 μA
100 nA
560
500 mV
- MHz
5 pF
250 mV
- MHz
3 pF
PIMZ2_PUMZ2_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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