PIMT1 Datasheet PDF - NXP Semiconductors


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PIMT1
NXP Semiconductors

Part Number PIMT1
Description PNP general purpose double transistor
Page 6 Pages

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DISCRETE SEMICONDUCTORS
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DATA SHEET
dbook, halfpage
M3D302
PIMT1
PNP general purpose double
transistor
Product data sheet
2001 Oct 22



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NXP Semiconductors
PNP general purpose double transistor
www.DataSheet4U.com
Product data sheet
PIMT1
FEATURES
600 mW total power dissipation
Low current (max. 100 mA)
Low voltage (max. 40 V)
Reduces number of components and required
PCB area
Reduced pick and place costs.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor pair in an SC-74 (SOT457) plastic package.
MARKING
TYPE NUMBER
PIMT1
MARKING CODE
M1
6 54
65 4
TR2
TR1
12
Top view
3
MAM457
123
Fig.1 Simplified outline (SC74; SOT457) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot total power dissipation
open emitter
open base
open collector
Tamb 25 °C; note 1
Tamb 25 °C; note 1
− −50 V
− −40 V
− −5 V
100
mA
200
mA
200
mA
300 mW
65
+150
°C
150 °C
65
+150
°C
600 mW
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2001 Oct 22
2



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NXP Semiconductors
PNP general purpose double transistor
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Product data sheet
PIMT1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
208 K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO collector-base cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp 300 μs; δ ≤ 0.02.
CONDITIONS
MIN.
MAX.
UNIT
VCB = 30 V; IE = 0
VCB = 30 V; IE = 0; Tj = 150 °C
VEB = 4 V; IC = 0
VCE = 6 V; IC = 1 mA
IC = 50 mA; IB = 5 mA; note 1
VCB = 12 V; IE = Ie = 0; f = 1 MHz
VCE = 12 V; IC = 2 mA;
f = 100 MHz
120
100
100
10
100
200
2.2
nA
μA
nA
mV
pF
MHz
2001 Oct 22
3



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NXP Semiconductors
PNP general purpose double transistor
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
DB
www.DataSheet4U.com
Product data sheet
PIMT1
SOT457
E AX
y
65 4
HE v M A
pin 1
index
1
e
2
bp
3
wM B
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp
c
D
E
e HE Lp Q
v
w
y
mm
1.1 0.1 0.40 0.26
0.9 0.013 0.25 0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2001 Oct 22
IEC
REFERENCES
JEDEC
EIAJ
SC-74
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04




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