PIMN31 Datasheet PDF - NXP Semiconductors


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PIMN31
NXP Semiconductors

Part Number PIMN31
Description 50V NPN/NPN double resistor-equipped transistor
Page 11 Pages

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PIMN31
500 mA, 50 V NPN/NPN double resistor-equipped transistor;
R1 = 1 k, R2 = 10 k
Rev. 01 — 19 June 2007
Product data sheet
1. Product profile
1.1 General description
500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features
I 500 mA output current capability
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
I AEC-Q101 qualified
1.3 Applications
I Digital application in automotive and industrial segments
I Switching loads
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
Min Typ Max Unit
--
--
0.7 1
9 10
50 V
500 mA
1.3 k
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PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 k, R2 = 10 k
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
Simplified outline Symbol
654
65
4
123
R1
TR1
R2
R2
TR2
R1
1 23
sym063
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PIMN31
SC-74
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PIMN31
Marking code
4E
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
open emitter
open base
open collector
-
-
-
-
negative
-
IO output current
Ptot total power dissipation Tamb 25 °C
-
[1] -
Max Unit
50 V
50 V
5V
+12 V
5 V
500 mA
290 mW
PIMN31_1
Product data sheet
Rev. 01 — 19 June 2007
© NXP B.V. 2007. All rights reserved.
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PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 k, R2 = 10 k
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 °C
[1] -
-
65
65
Max Unit
420
150
+150
+150
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
500
Ptot
(mW)
400
006aab054
300
200
100
0
75
25
25
FR4 PCB, standard footprint
Fig 1. Power derating curve
75 125 175
Tamb (°C)
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
in free air
Min Typ Max Unit
[1] - - 431 K/W
- - 105 K/W
[1] - - 298 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PIMN31_1
Product data sheet
Rev. 01 — 19 June 2007
© NXP B.V. 2007. All rights reserved.
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PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 k, R2 = 10 k
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.10
0.75
0.33
0.05
10 0.02
0.01
006aaa494
0
1
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT457 (SC-74);
typical values
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
collector-emitter
cut-off current
VCE = 50 V; IB = 0 A
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 50 mA
IC = 50 mA; IB = 2.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 20 mA
R2/R1
bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
- - 100 nA
- - 0.5 µA
- - 0.72 mA
70 -
--
-
0.3 V
0.3 0.6 1
V
0.4 0.8 1.4 V
0.7 1
1.3 k
9 10 11
- 7 - pF
PIMN31_1
Product data sheet
Rev. 01 — 19 June 2007
© NXP B.V. 2007. All rights reserved.
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