PG05DBVSC Datasheet PDF - KEC semiconductor

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PG05DBVSC
KEC semiconductor

Part Number PG05DBVSC
Description TVS Diode
Page 2 Pages


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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05DBVSC
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
PPK
Tj
Tstg
RATING
50
-55 150
-55 150
UNIT
CATHODE MARK
21
B
DIM MILLIMETERS
A A 1.4Ź0.05
B 1.0Ź0.05
C 0.6Ź0.05
D 0.28Ź0.03
E 0.5Ź0.05
F 0.12Ź0.03
1. ANODE
2. ANODE
VSC
Marking
21
5B
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=5V
VR=0V, f=1MHz
MIN.
-
5.8
-
-
TYP.
-
-
-
-
MAX.
5
7.8
5
60
UNIT
V
V
A
pF
2005. 6. 8
Revision No : 1
1/1



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PG05DBVSC
NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME
1K
100
10
1
10
PULSE DURATION TP (µs)
100
110
100
90
80
70
60
50
40
30
20
10
0
0
POWER DERATION CURVE
Peak Pulse Power
8/20us
Average Power
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
110
100
90
80
70
60
50
40
30
20
10
0
0
PULSE WAVEFORM
Waveform
Parameters :
tr=8µs
td=20µs
e -t
td=lpp/2
5 10 15 20 25 30
TIME (µs)
2005. 6. 8.
Revision No : 1
2/2



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PG05DBVSC TVS Diode PG05DBVSC
KEC semiconductor
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