PESD5V0V1BSF Datasheet PDF - NXP Semiconductors

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PESD5V0V1BSF
NXP Semiconductors

Part Number PESD5V0V1BSF
Description Ultra low profile bidirectional very low capacitance ESD protection diode
Page 13 Pages


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PESD5V0V1BSF
Ultra low profile bidirectional very low capacitance
ESD protection diode
Rev. 2 — 17 February 2011
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
„ Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
„ Bidirectional ESD protection of one line
„ Very low diode capacitance Cd = 3.5 pF
„ ESD protection up to ±15 kV according to IEC 61000-4-2
„ Ultra small SMD package
„ Symmetrical breakdown voltage
1.3 Applications
„ Cellular handsets and accessories
„ Portable electronics
„ Communication systems
„ Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VRWM
reverse standoff voltage
5 -
5V
Cd diode capacitance
f = 1 MHz; VR = 0 V [1] 2.5 3.5 4.5 pF
[1] This parameter is guaranteed by design.
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NXP Semiconductors
PESD5V0V1BSF
Bidirectional very low capacitance ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
Simplified outline
12
Transparent
top view
Graphic symbol
12
sym045
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PESD5V0V1BSF -
leadless ultra small package; 2 terminals;
body 0.6 × 0.3 × 0.3 mm
Version
SOD962
4. Marking
Table 4. Marking codes
Type number
PESD5V0V1BSF
Marking code
V
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PPP
IPP
Tj
Tamb
Tstg
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
tp = 8/20 μs
tp = 8/20 μs
Min
[1][2] -
[1][2] -
-
55
65
Max
8
1
150
+150
+150
Unit
W
A
°C
°C
°C
[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5;
see Figure 1.
[2] Measured from pin 1 to pin 2.
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PESD5V0V1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
PESD5V0V1BSF
Bidirectional very low capacitance ESD protection diode
Table 6.
Symbol
VESD
ESD maximum ratings
Parameter
Conditions
electrostatic
discharge voltage
IEC 61000-4-2
(contact discharge)
IEC 61000-4-2
(air discharge)
MIL-STD-883
(human body model)
Min
[1][2] -
-
-
[1] Measured from pin 1 to pin 2.
[2] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Max Unit
15 kV
15 kV
15 kV
Table 7. ESD standards compliance
Standard
IEC 61000-4-2, level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
120
IPP
(%)
80
40
100 % IPP; 8 μs
001aaa630
et
50 % IPP; 20 μs
0
0 10 20 30 40
t (μs)
Fig 1. 8/20 μs pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
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PESD5V0V1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
PESD5V0V1BSF
Bidirectional very low capacitance ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff
voltage
IRM
reverse leakage
VRWM = 5 V
current
VCL
VBR
Cd
LS
Rdyn
clamping voltage
breakdown voltage
diode capacitance
series inductance
dynamic resistance
IPP = 0.5 A
IPP = 1 A
IR = 1 mA
IR = 1 mA
f = 1 MHz
VR = 0 V
VR = 2.5 V
VR = 5 V
Min Typ Max Unit
5
-
[1][2] -
[1][2] -
[3] 6
[3] 10
[4]
2.5
-
-
[5] -
[6] -
- 5V
1 100 nA
- 11.5 V
- 12.8 V
- 10 V
- 6 V
3.5 4.5
2.7 3.5
2.5 3.2
0.05 -
2.5 -
pF
pF
pF
nH
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5;
see Figure 1.
[2] Measured from pin 1 to pin 2.
[3] Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin 1 to pin 2 and vice versa.
[4] This parameter is guaranteed by design.
[5] Calculated from S-parameter values.
[6] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
www.DataSheet4U.com
PESD5V0V1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
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