PEMH9 Datasheet PDF - NXP Semiconductors


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PEMH9
NXP Semiconductors

Part Number PEMH9
Description NPN/PNP resistor-equipped transistors
Page 9 Pages

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DATA SHEET
PIMH9; PUMH9; PEMH9
NPN/NPN resistor-equipped
transistors; R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
Supersedes data of 2003 Sep 15
2004 Apr 14



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NXP Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
www.DataSheet4U.com
Product data sheet
PIMH9; PUMH9;
PEMH9
FEATURES
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO output current (DC)
TR1 NPN
TR2 NPN
R1 bias resistor
R2 bias resistor
TYP.
10
47
MAX. UNIT
50 V
100 mA
−−
−−
kΩ
kΩ
DESCRIPTION
NPN/NPN resistor-equipped transistor (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PEMH9
PIMH9
PUMH9
PACKAGE
PHILIPS
SOT666
SOT457
SOT363
EIAJ
SC-74
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE
H9
H9
H*9(1)
PNP/PNP
COMPLEMENT
PEMB9
PUMB9
NPN/PNP
COMPLEMENT
PEMD9
PUMD9
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMH9
PIMH9
PUMH9
SIMPLIFIED OUTLINE AND SYMBOL
handbook, half6page
5
1
Top view
2
6
4
TR1
3
MHC049
1
5
R1 R2
R2 R1
2
4
TR2
3
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collectorTR1
2004 Apr 14
2



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NXP Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
www.DataSheet4U.com
Product data sheet
PIMH9; PUMH9; PEMH9
ORDERING INFORMATION
TYPE NUMBER
PEMH9
PIMH9
PUMH9
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
VERSION
SOT666
SOT457
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
VCBO
VCEO
VEBO
Vi
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
IO output current
ICM peak collector current
Ptot total power dissipation
SOT363
SOT457
SOT666
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot total power dissipation
SOT363
SOT457
SOT666
open emitter
open base
open collector
Tamb 25 °C
note 1
note 1
notes 1 and 2
Tamb 25 °C
note 1
note 1
notes 1 and 2
MIN.
65
65
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
MAX.
50
50
10
+40
10
100
100
200
300
200
+150
150
+150
300
600
300
UNIT
V
V
V
V
V
mA
mA
mW
mW
mW
°C
°C
°C
mW
mW
mW
2004 Apr 14
3



No Preview Available !

NXP Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
www.DataSheet4U.com
Product data sheet
PIMH9; PUMH9; PEMH9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
Per device
Rth(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
CONDITIONS
Tamb 25 °C
note 1
note 1
notes 1 and 2
Tamb 25 °C
note 1
note 1
notes 1 and 2
VALUE
625
417
625
416
208
416
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
R-----2--
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0 A
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
VCE = 5 V; IC = 5 mA
IC = 5 mA; IB = 0.25 mA
VCE = 5 V; IC = 100 μA
VCE = 0.3 V; IC = 1 mA
resistor ratio
Cc collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
MIN.
100
1.4
7
3.7
TYP.
0.7
0.8
10
4.7
MAX. UNIT
100 nA
1 μA
50 μA
150 μA
100 mV
0.5 V
V
13 kΩ
5.7
− − 2.5 pF
2004 Apr 14
4




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