PEMB30 Datasheet PDF - NXP

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PEMB30
NXP

Part Number PEMB30
Description PNP/PNP double resistor-equipped transistors
Page 10 Pages


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PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors;
R1 = 2.2 k, R2 = open
Rev. 01 — 31 March 2006
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages.
www.DataSheet4U.com
Table 1. Product overview
Type number
Package
Philips
PEMB30
SOT666
PUMB30
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD30
PUMD30
NPN/NPN
complement
PEMH30
PUMH30
1.2 Features
I 100 mA output current capability
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
1.3 Applications
I Low current peripheral driver
I Control of IC inputs
I Cost-saving alternative for BC857BS
and BC857BV
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ Max Unit
--
--
1.54 2.2
50
100
2.86
V
mA
k



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Philips Semiconductors
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open
2. Pinning information
www.DataSheet4U.com
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
Simplified outline Symbol
654
6 54
123
001aab555
R1
TR2
TR1
R1
123
006aaa268
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description
PEMB30
-
plastic surface-mounted package; 6 leads
PUMB30
SC-88 plastic surface-mounted package; 6 leads
4. Marking
Table 5. Marking codes
Type number
PEMB30
PUMB30
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
2T
*B2
Version
SOT666
SOT363
PEMB30_PUMB30_1
Product data sheet
Rev. 01 — 31 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Philips Semiconductors
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open
5. Limiting values
www.DataSheet4U.com
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
per transistor
VCBO
collector-base voltage
VCEO
collector-emitter voltage
VEBO
IO
emitter-base voltage
output current
ICM peak collector current
Ptot total power dissipation
SOT363
SOT666
Per device
Ptot total power dissipation
SOT363
SOT666
Tstg
Tj
Tamb
storage temperature
junction temperature
ambient temperature
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
Tamb 25 °C
-
-
-
-
-
[1] -
[1][2] -
[1] -
[1][2] -
65
-
65
50
50
5
100
100
V
V
V
mA
mA
200 mW
200 mW
300
300
+150
150
+150
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
in free air
in free air
Min Typ Max Unit
[1] - - 625 K/W
[1][2] - - 625 K/W
[1] - - 416 K/W
[1][2] - - 416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMB30_PUMB30_1
Product data sheet
Rev. 01 — 31 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
3 of 10



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Philips Semiconductors
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open
7. Characteristics
www.DataSheet4U.com
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter cut-off
current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
R1 bias resistor 1 (input)
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
- - 100 nA
- - 1 µA
- - 50 µA
- - 100 nA
30 -
--
-
150 mV
1.54 2.2
--
2.86 k
3 pF
500
hFE
400
(1)
006aaa691
300 (2)
200
(3)
100
0
101
1
10 102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 1. DC current gain as a function of collector
current; typical values
1
VCEsat
(V)
101
(1)
(2)
(3)
006aaa692
102
101
1
10 102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PEMB30_PUMB30_1
Product data sheet
Rev. 01 — 31 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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