PDTA123J Datasheet PDF - NXP Semiconductors


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PDTA123J
NXP Semiconductors

Part Number PDTA123J
Description PNP resistor-equipped transistors
Page 14 Pages

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DISCRETE SEMICONDUCTORS
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DATA SHEET
PDTA123J series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Product data sheet
Supersedes data of 2003 Apr 14
2004 Aug 02



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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
www.DataSheet4U.com
Product data sheet
PDTA123J series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO output current (DC)
R1 bias resistor
R2 bias resistor
TYP.
2.2
47
MAX. UNIT
50 V
100
mA
kΩ
kΩ
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA123JE
PDTA123JEF
PDTA123JK
PDTA123JM
PDTA123JS
PDTA123JT
PDTA123JU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
27
27
43
DG
TA123J
*23(1)
*43(1)
PDTC123JE
PDTC123JEF
PDTC123JK
PDTC123JM
PDTC123JS
PDTC123JT
PDTC123JU
2004 Aug 02
2



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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PDTA123JS
SIMPLIFIED OUTLINE AND SYMBOL
handbook, halfpage
1
2
3
R1
1
R2
MAM338
2
3
www.DataSheet4U.com
Product data sheet
PDTA123J series
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
PDTA123JE
PDTA123JEF
PDTA123JK
PDTA123JT
PDTA123JU
handbook, halfpage 3
1
Top view
2
R1
1
R2
3
2
MDB271
1 base
2 emitter
3 collector
PDTA123JM
handbook, halfpage
2 R1
1
3
3
1 R2
2
Bottom view
MDB267
1 base
2 emitter
3 collector
2004 Aug 02
3



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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
www.DataSheet4U.com
Product data sheet
PDTA123J series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
MIN.
65
65
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
MAX.
50
50
10
+5
12
100
100
500
250
250
200
150
250
250
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
VALUE
250
500
500
625
833
500
500
2004 Aug 02
4
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W




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