PDTA114E Datasheet PDF - NXP Semiconductors


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PDTA114E
NXP Semiconductors

Part Number PDTA114E
Description PNP resistor-equipped transistors
Page 14 Pages

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DISCRETE SEMICONDUCTORS
www.DataSheet4U.com
DATA SHEET
PDTA114E series
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Product data sheet
Supersedes data of 2003 Apr 10
2004 Aug 02



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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
www.DataSheet4U.com
Product data sheet
PDTA114E series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO output current (DC)
R1 bias resistor
R2 bias resistor
TYP.
10
10
MAX. UNIT
50 V
100
mA
kΩ
kΩ
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
03
03
03
E5
TA114E
*03(1)
*03(1)
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
2004 Aug 02
2



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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PDTA114ES
SIMPLIFIED OUTLINE AND SYMBOL
handbook, halfpage
1
2
3
R1
1
R2
MAM338
2
3
www.DataSheet4U.com
Product data sheet
PDTA114E series
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114ET
PDTA114EU
handbook, halfpage 3
1
Top view
2
R1
1
R2
3
2
MDB271
1 base
2 emitter
3 collector
PDTA114EM
handbook, halfpage
2 R1
1
3
3
1 R2
2
Bottom view
MDB267
1 base
2 emitter
3 collector
2004 Aug 02
3



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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
www.DataSheet4U.com
Product data sheet
PDTA114E series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
MIN.
65
65
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
MAX.
50
50
10
+10
40
100
100
500
250
250
200
150
250
250
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
VALUE
250
500
500
625
833
500
500
2004 Aug 02
4
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W




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