PCFMB75E6 Datasheet PDF - Nihon

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PCFMB75E6
Nihon

Part Number PCFMB75E6
Description IGBT
Page 4 Pages


PCFMB75E6 datasheet pdf
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IGBT Module-Chopper
75 A,600V
PCFMB75E6
□ 回 路 図 : CIRCUIT
(C2E1)
1
(E2)
2
(C1)
3
5(E1)
4(G1)
□ 外 形 寸 法 図 : OUTLINE DRAWING
94
80 ±0 .2 5
12 11 12 11 12
12 3
2-Ø 5.5
3-M5
5
4
23 23 17
16 7 16 7 16
4-fasten tab
#110 t= 0.5
LABEL
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
Symbol
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
CES
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
GES
コレク
Collector
コレク
Collector
タ電流
Current
タ損失
Power Dissipation
DC
1ms
CP
接合温度
Junction Temperature Range
保存温度
Storage Temperature Range
stg
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
ISO
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
tor
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Rated Value
600
±20
75
150
320
-40~+150
-40~+125
2,500
2(20.4)
Unit
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ遮断電流
Collector-Emitter Cut-Off Current
CES
CE= 600V, VGE= 0V
1.0
mA
ゲート漏れ電流
Gate-Emitter Leakage Current
GES
GE= ±20V,VCE= 0V
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 75A,VGE= 15V
2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 75mA
4.0
8.0
入力容量
Input Capacitance
ies
CE= 10V,VGE= 0V,f= 1MH
- 3,200 - pF
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
on
off
CC= 300V
= 4.0Ω
= 12.0Ω
GE= ±15V
- 0.15 0.30
0.25 0.40
0.10 0.35
μs
- 0.35 0.70
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
Item
Symbol
Rated Value
Unit
順電流
Forward Current
DC
1ms
FM
75
150
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 75A,VGE= 0V
= 75A,VGE= -10V
di/dt= 150A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c)
Junction to Case
(Tc測定点チップ直下)
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Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.38
0.80
Unit
℃/W
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PCFMB75E6
150
125
100
75
50
25
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
1234
Collector to Emitter Voltage VCE (V)
9V
8V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=30A
150A
75A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
150
125
100
75
50
25
0
0
16
14
12
10
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8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=30A
75A
150A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=4.0(
350 TC=25°C
16
14
300 12
250 10
200
VCE=300V
8
150
200V
6
100
100V
4
50 2
00
0 50 100 150 200 250 300
Total Gate Charge Qg (nC)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
30000
10000
VGE=0V
f=1MHZ
TC=25°C
3000
Cies
1000
300
Coes
Cres
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
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PCFMB75E6
Fig.7- Collector Current vs. Switching Time (Typical)
1
0.8
tOFF
VCC=300V
RG=12(
VGE=±15V
TC=25°C
Resistive Load
0.6
tf
0.4
0.2 tON
tr(VCE)
0
0
50 100
Collector Current IC (A)
150
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=300V
5
IC=75A
VGE=±15V
TC=25°C
2 Resistive Load
1
0.5
toff
0.2 ton
0.1
tr(VCE)
tf
0.05
0.02
10
30 100
Series Gate Impedance RG (()
300
Fig.9- Collector Current vs. Switching Time
10
1 tOFF
tON
0.1
tf
VCC=300V
RG=12(
VGE=±15V
TC=125°C
Inductive Load
tr(Ic)
0.01
0.001
0
25 50 75 100 125 150
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
8
VCC=300V
RG=12(
VGE=±15V
TC=125°C
6 Inductive Load
EOFF
4 EON
ERR
2
0
0 25 50 75 100 125 150
Collector Current IC (A)
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=300V
5
IC=75A
VGE=±15V
TC=125°C
2 Inductive Load
1
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0.5
toff
0.2 ton
0.1 tf
0.05
tr(IC)
0.02
10
30 100
Series Gate Impedance RG (()
300
Fig.12- Series Gate Impedance vs. Switching Loss
100
VCC=300V
IC=75A
VGE=±15V
30 TC=125°C
Inductive Load
EON
10
EOFF
3
ERR
1
0.3
10
30 100
Series Gate Impedance RG (()
300
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PCFMB75E6
Fig.13- Forward Characteristics of Free Wheeling Diode
150 (Typical)
TC=25°C
TC=125°C
125
100
75
50
25
0
01234
Forward Voltage VF (V)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
500
trr
IF=75A
TC=25°C
TC=125°C
200
100
50
20
10 IRrM
5
2
0 75 150 225 300 375 450
-di/dt (A/µs)
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.15- Reverse Bias Safe Operating Area
RG=12(, VGE=±15V, TC<125°C
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200 400 600
Collector to Emitter Voltage V CE (V)
800
1x101
3
1
3x10-1
1x10-1
3x10-2
1x10-2
3x10-3
10-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10-4
10-3
10-2
10-1
1
101
Time t (s)
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Nihon
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