PC015BD Datasheet PDF - UNIKC

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PC015BD
UNIKC

Part Number PC015BD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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PC015BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
300mΩ @VGS = 10V
ID
6A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
6
4
15
Avalanche Current
IAS 5.5
Avalanche Engergy
L = 0.1 mH
EAS
1.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
5 °C / W
Rev 1.2
1 2016/1/29

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PC015BD N-Channel Enhancement Mode MOSFET PC015BD
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