PC015BD Datasheet PDF - UNIKC

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PC015BD
UNIKC

Part Number PC015BD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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PC015BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
300mΩ @VGS = 10V
ID
6A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
6
4
15
Avalanche Current
IAS 5.5
Avalanche Engergy
L = 0.1 mH
EAS
1.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
5 °C / W
Rev 1.2
1 2016/1/29



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PC015BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
150
1 1.6 3.0
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 10V
15
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 7A
VDS = 5V, ID = 7A
285 450
235 300
10
DYNAMIC
Input Capacitance
Ciss
991
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
40
Reverse Transfer Capacitance
Crss
32
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHZ
VDS = 75V, VGS = 10V,
ID = 7A
VDS = 75V,
ID@ 7A, VGS = 10V, RGEN = 6Ω
1.3
23
4
8.5
12
21
40
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 1.8A, VGS = 0V
6
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
72
168
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Rev 1.2
2 2016/1/29



No Preview Available !

PC015BD
N-Channel Enhancement Mode MOSFET
Rev 1.2
3 2016/1/29



No Preview Available !

PC015BD
N-Channel Enhancement Mode MOSFET
Rev 1.2
4 2016/1/29



PC015BD datasheet pdf
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PC015BD pdf
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PC015BD N-Channel Enhancement Mode MOSFET PC015BD
UNIKC
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